A review of electrical characterization techniques for ultrathin FDSOI materials and devices

Cristoloveanu, S.; Bawedin, M.; Ionica, I.

doi:10.1016/j.sse.2015.11.007

Cited by 48 publications

(23 citation statements)

References 115 publications

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“…Notably, in the positive V BG regime, a hump associated with a rapid enhancement of I DS appears, independent of V DS . This strongly implies the presence of two different conduction mechanisms or conducting paths, similar to double-gate Si and junctionless Si transistors 36,37 .…”

Section: Resultsmentioning

confidence: 99%

High-mobility junction field-effect transistor via graphene/MoS2 heterointerface

Kim

Fan

Lee

et al. 2020

Sci Rep

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Monolayer molybdenum disulfide (MoS 2) possesses a desirable direct bandgap with moderate carrier mobility, whereas graphene (Gr) exhibits a zero bandgap and excellent carrier mobility. Numerous approaches have been suggested for concomitantly realizing high on/off current ratio and high carrier mobility in field-effect transistors, but little is known to date about the effect of twodimensional layered materials. Herein, we propose a Gr/MoS 2 heterojunction platform, i.e., junction field-effect transistor (JFET), that enhances the carrier mobility by a factor of ~ 10 (~ 100 cm 2 V −1 s −1) compared to that of monolayer MoS 2 , while retaining a high on/off current ratio of ~ 10 8 at room temperature. The Fermi level of Gr can be tuned by the wide back-gate bias (V BG) to modulate the effective Schottky barrier height (SBH) at the Gr/MoS 2 heterointerface from 528 meV (n-MoS 2 /p-Gr) to 116 meV (n-MoS 2 /n-Gr), consequently enhancing the carrier mobility. The double humps in the transconductance derivative profile clearly reveal the carrier transport mechanism of Gr/MoS 2 , where the barrier height is controlled by electrostatic doping.

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Section: Resultsmentioning

confidence: 99%

High-mobility junction field-effect transistor via graphene/MoS2 heterointerface

Kim

Fan

Lee

et al. 2020

Sci Rep

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“…However an implementation of the SHG for SOI characterization would be very advantageous since the methods typically used to extract electrical properties of SOI wafers (i.e. interface trap densities) necessitate either full fabrication of test devices (which is not time and cost-effective) or placing metallic probes on the film (highly destructive especially for ultra-thin films) (26). Within this context, the non-destructive SHG, sensitive to interface electric fields has a great potential.…”

Section: Shg For Multiple Dielectric-semiconductor Interfacesmentioning

confidence: 99%

(Invited) Second Harmonic Generation: A Powerful Non-Destructive Characterization Technique for Dielectric-on-Semiconductor Interfaces

et al. 2020

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The second harmonic generation (SHG) proved to be a very promising characterization technique for dielectric-semiconductor interfaces because it is sensitive, non-destructive, can be applied directly on wafer, at different stages of wafer processing. The method, based on non-linear optics effects, is measuring a signal encompassing the "static" electric field at the dielectricsemiconductor interface which is directly related to the oxide charges Q ox and to the interface state density D it. A general methodology for Q ox and D it extraction from SHG measurements requires (i) calibration based on parameters obtained by classical electrical methods and (ii) modeling to capture the optical propagation phenomena that impact the SHG signal. In this paper, we discuss these issues based on a review of our recent advances on how to exploit SHG for dielectrics on semiconductor characterization.

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“…[124][125][126][127][128][129][130][131]. The interfacial defect densities modified by ion implantation have been studied combining IPE and ac conductance spectroscopy methods on nitrogen implanted SiC/SiO 2 interfaces [132].…”

Section: Photoinjectionmentioning

confidence: 99%

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Fedorenko¹

2017

Ion Implantation - Research and Application

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Ion implantation is a nonequilibrium doping technique, which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of doping impurities can be considered as distinct advantages of ion implantation. Due to excellent controllability, uniformity, and the dose insensitive relative accuracy ion implantation has grown to be the principal doping technology used in the manufacturing of integrated circuits. Originally developed from particle accelerator technology, ion implanters operate in the energy range from tens eV to several MeV (corresponding to a few nms to several microns in depth range). Ion implantation introduces point defects in solids. Very minute concentrations of defects and impurities in semiconductors drastically alter their electrical and optical properties. This chapter presents methods of defect spectroscopy to study the defect origin and characterize the defect density of states in thin film and semiconductor interfaces. The methods considered are positron annihilation spectroscopy, electron spin resonance, and approaches for electrical characterization of semiconductor devices.

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A review of electrical characterization techniques for ultrathin FDSOI materials and devices

Cited by 48 publications

References 115 publications

High-mobility junction field-effect transistor via graphene/MoS2 heterointerface

High-mobility junction field-effect transistor via graphene/MoS2 heterointerface

(Invited) Second Harmonic Generation: A Powerful Non-Destructive Characterization Technique for Dielectric-on-Semiconductor Interfaces

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

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