The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs

Xie, Tiantian; Ge, Hao; Lv, Yinghuan; Chen, Jing

doi:10.1016/j.microrel.2020.114001

Cited by 3 publications

(1 citation statement)

References 22 publications

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“…These trap charges degrade device performance, which is referred to as the total ionizing dose (TID) effect. (1)(2)(3) The TID effect leads to threshold voltage drift, increased off-state leakage current, decreased transconductance, and other issues (4,5) up to the permanent failure of the circuit function. For nanoscale fully depleted silicon-on-insulator (FDSOI) devices, (6)(7)(8)(9)(10) the gate oxide layer may be very thin, (11)(12)(13) which makes the effect of gate oxygen trap charges generated by irradiation on device performance negligible.…”

Section: Introductionmentioning

confidence: 99%

Influence of Buried Oxide Layer and Bias State on Total Ionizing Dose of Fully Depleted Silicon-on-insulator Devices

Du¹,

Liu²,

Wang³

2023

Sensors and Materials

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A fully depleted silicon-on-insulator (FDSOI) device is a promising structure for future ultrascaled devices because of its high radiation resistance. The buried oxide (BOX) layer of an FDSOI device not only enhances its robustness against single event effects (SEE) but also greatly reduces its ability to resist the effect of the total ionizing dose (TID). We studied factors such as the thickness of BOX layers and the bias state of FDSOI devices and proposed a 22 nm N-type FDSOI 2D device structure. The method of adding fixed charges to the BOX layer and adding state charges to the interface was used to simulate the TID effect. We showed that the thinner the BOX layer, the better the device's ability to resist the effects of the TID. Increasing the total radiation dose causes the electron density of the channel to increase, indicating that the electron mobility of the channel is degraded. Because a large number of electrons are generated by irradiation, their density increases, causing a large number of electrons to collide with each other and scatter under a bias voltage, resulting in decreased electron mobility. By activating the built-in radiation model of the Sentaurus next-generation technology computer-aided design (TCAD) simulation tool, the device was used to simulate the TID effect under different doses in different bias states (OFF, ON, and transmission). The results showed that the most unappealing bias state of the TID effect for the short-channel N-type FDSOI device is the off state. This research provides new insights into the TID for FDSOI devices and can provide guidelines for future applications of radiation-hardened FDSOI-based circuits. The study of single particle effects plays an important role in the study of image sensors in space stations.

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Section: Introductionmentioning

confidence: 99%

Influence of Buried Oxide Layer and Bias State on Total Ionizing Dose of Fully Depleted Silicon-on-insulator Devices

Du¹,

Liu²,

Wang³

2023

Sensors and Materials

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Degradation behavior and mechanism of SiC power MOSFETs by total ionizing dose irradiation under different gate voltages

Gao

Chen

Zheng

et al. 2021

2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

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Study of the Within-Batch TID Response Variability on Silicon-Based VDMOS Devices

Cui

Zheng

et al. 2023

Electronics

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Silicon-based vertical double-diffused MOSFET (VDMOS) devices are important components of the power system of spacecraft. However, VDMOS is sensitive to the total ionizing dose (TID) effect and may have TID response variability. The within-batch TID response variability on silicon-based VDMOS devices is studied by the 60Co gamma-ray irradiation experiment in this paper. The variations in device parameters after irradiation is obtained, and the damage mechanism is revealed. Experimental results show that the standard deviations of threshold voltage, subthreshold swing, output capacitance, and diode forward voltage increase, while the standard deviation of maximum transconductance decreases after irradiation. The standard deviation of on-state resistance is basically unchanged before and after irradiation. By separating the trapped charges generated by TID irradiation, it is found that the deviation of the oxide trapped charges and the interface traps increase with the increase in the total dose. The reasons for the variation in device parameters after irradiation are revealed by establishing the relationship between the trapped charges and the electrical parameters before and after irradiation.

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The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs

Cited by 3 publications

References 22 publications

Influence of Buried Oxide Layer and Bias State on Total Ionizing Dose of Fully Depleted Silicon-on-insulator Devices

Influence of Buried Oxide Layer and Bias State on Total Ionizing Dose of Fully Depleted Silicon-on-insulator Devices

Degradation behavior and mechanism of SiC power MOSFETs by total ionizing dose irradiation under different gate voltages

Study of the Within-Batch TID Response Variability on Silicon-Based VDMOS Devices

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