Abstract:A fully depleted silicon-on-insulator (FDSOI) device is a promising structure for future ultrascaled devices because of its high radiation resistance. The buried oxide (BOX) layer of an FDSOI device not only enhances its robustness against single event effects (SEE) but also greatly reduces its ability to resist the effect of the total ionizing dose (TID). We studied factors such as the thickness of BOX layers and the bias state of FDSOI devices and proposed a 22 nm N-type FDSOI 2D device structure. The method… Show more
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