1980
DOI: 10.1016/0038-1101(80)90032-5
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The impact of molybdenum on silicon and silicon solar cell performance

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Cited by 51 publications
(21 citation statements)
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“…From these data the directly measured capture cross section of the interstitial molybdenum is 2.9x 10-16 cm 2 . This is similar to the value of 4.3 x 10-16 cm 2 measured by Rohatgi et al [8] using DLTS. The nano-precipitates have a much smaller majority cross section of 2.2x1O-19 cm 2 which is indicative of a Coulombic repulsion ie hole capture into a positively charged center.…”
Section: Electronic Propertiessupporting
confidence: 84%
“…From these data the directly measured capture cross section of the interstitial molybdenum is 2.9x 10-16 cm 2 . This is similar to the value of 4.3 x 10-16 cm 2 measured by Rohatgi et al [8] using DLTS. The nano-precipitates have a much smaller majority cross section of 2.2x1O-19 cm 2 which is indicative of a Coulombic repulsion ie hole capture into a positively charged center.…”
Section: Electronic Propertiessupporting
confidence: 84%
“…The large peak at around 175 K is a peak that has previously been related to single molybdenum atoms in solution and an Arrhenius plot confirmed it was the same peak. Measurements at different biases enable us to profile the concentration of the Mo‐related defects as a function of depth.…”
Section: Electronic Measurements and Propertiessupporting
confidence: 67%
“…Since the acceptor is deep (E b A kT ), it does not release holes for reasonable temperatures. Examples of suitable impurities for compensation of electrons are Si:Au [223], GaAs:Cr [224] and InP:Fe [225]. A deep donor, e.g.…”
Section: Semi-insulating Semiconductorsmentioning
confidence: 99%