Recombination via nano-precipitates &amp;#x2026; a new mechanism for efficiency loss in solar silicon?

Peaker, А. R.; Hamilton, B.; Leonard, S.; Markevich, V. P.; Youssef, Khaled M.; Rozgonyi, G. A.

doi:10.1109/pvsc.2014.6925076

Cited by 2 publications

(2 citation statements)

References 10 publications

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“…Vice versa, the dependence of the current on temperature is satisfactorily described by equation (1) over the whole temperature interval, though ∆E is reduced with respect to the value found in diodes near the distribution peak. A near-midgap level associated with small molybdenum precipitates has been reported [19,20], and might explain the results in figures 6 and 7. Such precipitates would be too small to produce the local electric field enhancement responsible for tunnel effect, so they still contribute to the reverse current as point-like generation-recombination centres, though a deep level transient spectroscopy analysis showed [19,20] are actually extended defects.…”

Section: Molybdenum-contaminated Diodessupporting

confidence: 56%

“…A near-midgap level associated with small molybdenum precipitates has been reported [19,20], and might explain the results in figures 6 and 7. Such precipitates would be too small to produce the local electric field enhancement responsible for tunnel effect, so they still contribute to the reverse current as point-like generation-recombination centres, though a deep level transient spectroscopy analysis showed [19,20] are actually extended defects. The energy level related to these precipitates is reported to be located at E v + 0.47 eV.…”

Section: Molybdenum-contaminated Diodessupporting

confidence: 56%

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Analysis of the dark current distribution of complementary metal-oxide-semiconductor image sensors in the presence of metal contaminants

Polignano¹,

Russo²,

Moccia³

et al. 2020

Semicond. Sci. Technol.

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We have analysed the effects of intentional metal contamination on the dark current of complementary metal-oxide-semiconductor image sensors. A few contaminants (molybdenum, tungsten, vanadium, titanium, copper) have been selected for this study, because they previously showed the most relevant impact on the dark current. The dependence of the dark current on temperature has been analysed in contaminated diodes from different regions of the dark current distribution. The generation current is always dominant in the diodes contaminated with the metals in this study, whether diodes in the peak of the distribution or in high current tails are considered. Diodes contaminated with slow diffusers never deviate from a diffusion-generation model of the current vs temperature. Copper contaminated diodes are the only example showing a limited but significant contribution approximately independent of temperature, which can be ascribed to a local tunnel current due to copper precipitates. From the point of view of dark current spectroscopy, this analysis shows that a correct identification of the dominant impurity is more easily obtained if diodes in the peak region of the dark current distribution are analysed. Indeed, in these diodes the generation current is characterized by an energy level which is a fingerprint of the dominant impurity. Vice versa, in high current diodes the dominant energy level can be different from this level, though the generation current is even more important in these diodes.

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