The impact of graphene properties on GaN and AlN nucleation

Balushi, Zakaria Y. Al; Miyagi, Takahira; Lin, Yu Chuan; Wang, Ke; Calderín, Lázaro; Bhimanapati, Ganesh R.; Redwing, Joan M.; Robinson, Joshua A.

doi:10.1016/j.susc.2014.11.020

Cited by 89 publications

(90 citation statements)

References 45 publications

(51 reference statements)

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“…Moreover, the reactivity of Gr is greatly enhanced by introducing defects after plasma treatment, which would be beneficial for the AlN nucleation. 34 The strong binding of Al adatoms to the defect sites and the free diffusion on the non-defective regions ensure the effective nucleation and fast growth for AlN layers, as observed in our experiments.…”

supporting

confidence: 66%

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Chang

Chen

et al. 2019

Applied Physics Letters

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We report the growth of high-quality AlN films on nano-patterned sapphire substrates (NPSSs) by graphene-assisted quasi-van der Waals epitaxy, which enables rapid coalescence to shorten the growth time. Due to the presence of graphene (Gr), AlN tends to be two-dimensional laterally expanded on the NPSS, leading to the reduction of dislocation density and strain release in the AlN epitaxial layer. Using first-principles calculations, we confirm that Gr can reduce the surface migration barrier and promote the lateral migration of metal Al atoms. Furthermore, the electroluminescence results of deep ultraviolet light emitting diodes (DUV-LEDs) have exhibited greatly enhanced emission located at 280 nm by inserting the Gr interlayer. The present work may provide the potential to solve the bottleneck of high efficiency DUV-LED.

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supporting

confidence: 66%

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Chang

Chen

et al. 2019

Applied Physics Letters

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“…Figure S4 in the Supporting Information proves that a three‐layer graphene has been successfully transferred on Si substrates. Figure a–c are the Raman mapping of the E 2 (high), G, and 2D bands located at 654, 1591, and 2695 cm −1 , respectively. The distribution of 2D AlN (E 2 (high) band) and graphene (2D band) indicates that the 2D AlN layers would grow in the regions of graphene/Si hetero‐structures.…”

mentioning

confidence: 99%

2D AlN Layers Sandwiched Between Graphene and Si Substrates

Wang

Zheng

et al. 2018

Advanced Materials

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As group III-nitride semiconductors are thinned to only a few atomic layers, regarding as 2D materials, it would lead to an ultrawide bandgap (E g ) due to the quantum confinement effect, [11,12] which can be used as ultraviolet optoelectronic devices needed ultrawide E g semiconductors. [13,14] Moreover, 2D group III-nitride semiconductors showing anomalously temperature-dependent thermal conductivity and orbitally driven ultra-low thermal conductivity have been predicted, [15,16] which make them prospective for applications in energy conversion, for example, thermos-electrics. [17] However, the experimental synthesis of 2D group III-nitride semiconductors is still meeting with tremendous difficulties due to the fact that group III-nitride semiconductors more easily orientate along c-axis than any other axis [18] and the lateral mobility for precursor atoms of group III-nitride materials, i.e., AlN, is very low, [19] which result in the formation of 3D crystal structure. Moreover, the surface energy constraint and large lattice mismatch between group III-nitride semiconductors and substrates would also lead to the formation of 3D island crystal. [11] In this work, we have successfully realized the epitaxial growth of 2D AlN layers sandwiched between graphene and Si substrates for the first time in the world by metal organic chemical vapor deposition (MOCVD). On the one hand, Si (111) surface with high symmetry [20] has stable adsorption sites for Al and N adatoms, Figure S1 in the Supporting Information. On the other hand, Si has a lattice mismatch with AlN(0001) of ≈19%, [21] Figure S2 in the Supporting Information, producing the tensile stress together with the effect of Gibbs free energy that drive the crystal structure of 2D AlN transforming from R3m structure to P6 3 MC structure. [22][23][24] During the growth process, hydrogenation for graphene/Si hetero-structures with hydrogen (H 2 ) guarantees the formation of 2D AlN layers. The 2D AlN layers are sandwiched between graphene and Si substrates after hydrogenation, while no interlayer can be found between graphene and Si substrates without hydrogenation. To further study the formation mechanism of 2D AlN layers and the effect of hydrogenation on the formation of 2D AlN layers, theoretical calculations with first-principles calculations based on density functional theory (DFT) have been carried out. We further predicted and determined the E g of the 2D AlN layers theoretically and experimentally by Hartree-Fock local density

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“…The preparation of GaN on cheaper and larger substrates has attracted much attention. The use of graphene as a substrate for GaN deposition has gained much attention due to the hexagonal arrangement of the sp 2 hybridized carbon atoms, which is similar to the c-plane of wurtzite GaN [7,8]. In addition, the lattice mismatch may not be considered seriously as a result of the potential for van der Waals bonding at the GaN/graphene interface [9].…”

Section: Introductionmentioning

confidence: 99%

“…Despite the potential advantages, the growth of GaN on the basal plane pristine graphene is challenging, largely because of the absence of dangling bonds, which leaves the graphene surface chemically inert [7,12]. Ohta et al have developed a new thin film growth technique called pulsed sputtering deposition (PSD) and obtained crystalline GaN films on amorphous substrates with the use of graphene buffer layers [13].…”

Section: Introductionmentioning

confidence: 99%

Strain Effects in Gallium Nitride Adsorption on Defective and Doped Graphene: First-Principles Calculations

Yan

Gan

et al. 2018

Crystals

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Transferable, low-stress gallium nitride grown on graphene for flexible lighting or display applications may enable next-generation optoelectronic devices. However, the growth of gallium nitride on graphene is challenging. In this study, the adsorptions of initial nucleation process of gallium nitride on graphene were investigated using first-principles calculations based on density functional theory. The adsorption energies and the role of in-plane strains were calculated for different possible configurations of the adatoms on the surfaces of vacancy defect and doped graphene. Compared with the results of the gallium adatom, adsorption of the nitrogen atom on graphene was found to exhibit greater stability. The calculations reveal that the vacancy defect core enhanced the adsorption stability of the adatom on graphene, whereas the incorporation of oxygen impurity greatly reduced the stable adsorption of the gallium and nitrogen adatoms. Furthermore, the calculations of strain showed that the lattice expansion led to increased stability for all adsorption sites and configuration surfaces, except for the nitrogen adatom adsorbed over the gallium atom in Ga-doped graphene. The study presented in this paper may have important implications in understanding gallium nitride growth on graphene.

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The impact of graphene properties on GaN and AlN nucleation

Cited by 89 publications

References 45 publications

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

2D AlN Layers Sandwiched Between Graphene and Si Substrates

Strain Effects in Gallium Nitride Adsorption on Defective and Doped Graphene: First-Principles Calculations

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