The impact of germanium in strained Si/relaxed Si_1−xGe_xon carrier performance in non-degenerate and degenerate regimes

Abstract

The impact of the fraction of germanium on the carrier performance of two-dimensional strained silicon, which embraces both the non-degenerate and degenerate regimes, is developed. In this model, the Fermi integral of order zero is employed. The impact of the fraction of germanium on the relaxed Si 1 x Ge x substrate (x/, carrier concentration and temperature is reported. It is revealed that the effect of x on the hole concentration is dominant for a normalized Fermi energy of more than three, or in other words the non-degenerate regime. On the contrary, the x gradient has less influence in the degenerate regime. Furthermore, by increasing x there is an increase in the intrinsic velocity, particularly with high carrier concentration and temperature.

Impact of self-heating effects on nanoscale Ge p-channel FinFETs with Si substrate

“…Many high-mobility materials [1][2][3][4][5][6], such as Germanium, III-V are widely used as alternative Si channel materials to improve the device current density. Germanium (Ge) is a promising candidate of sub-14 nm technology for the p channel device due to its high hole mobility.…”