The impact of controlled sodium incorporation on rapid thermal processed Cu(InGa)Se/sub 2/-thin films and devices

Probst, V.; Rimmasch, J.; Riedl, W.; Stetter, W.; Holz, Jürgen; Harms, Hauke; Karg, F.; Schock, Hans‐Werner

doi:10.1109/wcpec.1994.519828

Cited by 18 publications

(24 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While some groups 101,102 have reported an increase of the grain size in CIGS films containing Na, others did not support these observations. [103][104][105][106] A decreasing grain size was observed for several Na incorporation methods in a direct comparison.…”

Section: Sodium Incorporation In Cigsmentioning

confidence: 93%

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

353

192

View full text Add to dashboard Cite

Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

show abstract

Section: Sodium Incorporation In Cigsmentioning

confidence: 93%

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

353

192

View full text Add to dashboard Cite

show abstract

“…The trend as function of gas ambient remains similar to that of the as-grown films however, it can be observed that the absolute change in stress after annealing is less for films deposited at higher pressure. Following the above discussion the stress can be associated with the sputtering pressure such that lower deposition pressures yield more densely packed columnar grains towards compressive stress whereas higher pressure tends to form a more porous structure under tensile stress [20,21]. Therefore the porous nature of the films deposited at higher pressure allows more "flexibility" in the films and more resilience to the annealing process.…”

Section: -Effect Of Sputtering Pressurementioning

confidence: 96%

Electrical, morphological and structural properties of RF magnetron sputtered Mo thin films for application in thin film photovoltaic solar cells

et al. 2011

View full text Add to dashboard Cite

Molybdenum (Mo) thin films were deposited using radio frequency (RF) magnetron sputtering, for application as a metal back contact material in "substrate configuration" thin film solar cells. The variations of the electrical, morphological, and structural properties of the deposited films with sputtering pressure, sputtering power and post-deposition annealing were determined. The electrical conductivity of the Mo films was found to increase with decreasing sputtering pressure and increasing sputtering power. X-ray diffraction data showed that all the films had a (110) preferred orientation that became less pronounced at higher sputtering power while being relatively insensitive to process pressure. The lattice stress within the films changed from tensile to compressive with increasing sputtering power and the tensile stress increased with increasing sputtering pressure. The surface morphology of the films changed from pyramids to cigar-shaped grains for a sputtering power between 2 100 and 200 W, remaining largely unchanged at higher power. These grains were also observed to decrease in size with increasing sputtering pressure. Annealing the films was found to affect the resistivity and stress of the films. The resistivity increased due to the presence of residual oxygen and the stress changed from tensile to compressive. The annealing step was not found to affect the crystallisation and grain growth of the Mo films.

show abstract

“…4 In comparison high-efficiency devices on soda-lime glass substrates are typically obtained using growth temperatures of $550 C. Furthermore, it is well known that in a conventional sodalime glass substrate based CIGSe solar cell structure, Na from the soda-lime glass substrate diffuses into the absorber layer due to the elevated temperature during CIGSe formation. [5][6][7][8] Na incorporation into the CIGSe absorber results in a significant improvement of solar cell efficiency, [9][10][11][12] and so for devices based on alternative (i.e., Na-free) substrates, Na must be added deliberately as part of the solar cell manufacturing process. Na can be incorporated prior to, 13,14 during, 12,15 or after 2,16 CIGSe growth.…”

Section: Introductionmentioning

confidence: 99%

Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure

Song

Caballero

Félix

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

The following article appeared in Journal of Applied Physics 111.3 (2012): 034903 and may be found at http://scitation.aip.org/content/aip/journal/jap/111/3/10.1063/1.3679604Na has deliberately been incorporated into Cu(In,Ga)Se2 (CIGSe) chalcopyrite thin-film solar cell absorbers deposited on Mo-coated polyimide flexible substrates by adding differently thick layers of NaF in-between CIGSe absorber and Mo back contact. The impact of Na on the chemical and electronic surface structure of CIGSe absorbers with various Cu-contents deposited at comparatively low temperature (420 C) has been studied using x-ray photoelectron and x-ray excited Auger electron spectroscopy. We observe a higher Na surface content for the Cu-richer CIGSe samples and can distinguish between two different chemical Na environments, best described as selenide-like and oxidized Na species, respectively. Furthermore, we find a Cu-poor surface composition of the CIGSe samples independent of Na content and - for very high Na contents - indications for the formation of a (Cu,Na)-(In,Ga)-Se like compound. With increasing Na surface content, also a shift of the photoemission lines to lower binding energies could be identified, which we interpret as a reduction of the downward band bending toward the CIGSe surface explained by the Na-induced elimination of In Cu defects.X.S., R.F., D.G., R.G.W., and M.B. are grateful to the Helmholtz-Association for financial support (VH-NG-423). R.F. also acknowledges the support by the German Academic Exchange Agency (DAAD; 331 4 04 002)

show abstract

The impact of controlled sodium incorporation on rapid thermal processed Cu(InGa)Se/sub 2/-thin films and devices

Cited by 18 publications

References 2 publications

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Electrical, morphological and structural properties of RF magnetron sputtered Mo thin films for application in thin film photovoltaic solar cells

Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure

Contact Info

Product

Resources

About

The impact of controlled sodium incorporation on rapid thermal processed Cu(InGa)Se/sub 2/-thin films and devices

Cited by 18 publications

References 2 publications

Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cells

Electrical, morphological and structural properties of RF magnetron sputtered Mo thin films for application in thin film photovoltaic solar cells

Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure

Contact Info

Product

Resources

About

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells