1996
DOI: 10.1103/physrevb.53.9532
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Thes-dandp-dexchange interaction inZn1xFe

Abstract: The exciton splitting induced by the s-d and p-d exchange interaction in Zn 1Ϫx Fe x Te (xϽ0.005) was studied by polarized magnetoreflectance. Data were taken at 2 K in magnetic fields up to 5 T. Combining these results with magnetization data, a value (N 0 ␣ϪN 0 ␤) ϭ 2.1Ϯ0.4 eV was obtained for the difference between the s-d and p-d exchange constants. Assuming that N 0 ␣ϭϩ0.2 eV, the p-d exchange is antiferromagnetic, with a magnitude N 0 ␤ϭϪ1.9 eV.

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Cited by 14 publications
(5 citation statements)
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“…Cr(II) has a non-vanishing orbital momentum resulting in intermediate behavior between van Vleck and Brillouin paramagnetism, as well as a mutliplet ground state ( 5 T 2g , JT distorted 5 B 2g ground state). 34 The electronic energy structure of Cr(II) simultaneously with the JT effect has been reported in quite a few papers. 58,59 SpinÀorbit (SO) coupling results in further splitting, producing for Se and S lattices two unresolved singlet ground states (Γ 1 and Γ 2 ), a singlet excited state (Γ 4 ), and a doublet excited state (Γ 5 ) (Supporting Information S2).…”
Section: Resultsmentioning
confidence: 99%
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“…Cr(II) has a non-vanishing orbital momentum resulting in intermediate behavior between van Vleck and Brillouin paramagnetism, as well as a mutliplet ground state ( 5 T 2g , JT distorted 5 B 2g ground state). 34 The electronic energy structure of Cr(II) simultaneously with the JT effect has been reported in quite a few papers. 58,59 SpinÀorbit (SO) coupling results in further splitting, producing for Se and S lattices two unresolved singlet ground states (Γ 1 and Γ 2 ), a singlet excited state (Γ 4 ), and a doublet excited state (Γ 5 ) (Supporting Information S2).…”
Section: Resultsmentioning
confidence: 99%
“…69 Magnetic circular dichroism (MCD) experiments on Cr(II)-doped IIÀVI semiconductors have confirmed the presence of strong pÀd exchange leading to ferromagnetic DMS behavior. 34 Recently, MCD in Zn 1Àx Cr x Te films (with x = 0.2) revealed the occurrence of room-temperature (300 K) FM. 74,75 Saito et al demonstrated that Zn 1Àx Cr x Te is the third real ferromagnetic DMS after In 1Àx Mn x As and Ga 1Àx Mn x As, in which the spÀd exchange interaction could be used to develop spintronic devices.…”
Section: Resultsmentioning
confidence: 99%
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“…[23] In refs. [24][25][26][27][28][29][30][31][32], it was reported that Cr impurities in II-VI semiconductors make FM materials at room temperature.Zinc selenide, a semiconductor, can operate as a half-metallic compound and is a helpful material for optoelectronic and spintronic applications. Zinc selenide is a nonmagnetic material with a direct bandgap of 2.70 eV and has great potential for a diversity of optical and electro-optical devices, such as short wavelength lasers, blue-green laser diodes, pure green lightemitting diodes, microwave and terahertz devices, solar cells and tunable mid-IR laser sources.…”
mentioning
confidence: 99%
“…[23] In refs. [24][25][26][27][28][29][30][31][32], it was reported that Cr impurities in II-VI semiconductors make FM materials at room temperature.…”
mentioning
confidence: 99%