The<i>E</i>1–<i>E</i>2 center in gallium arsenide is the divacancy

Schultz, Peter A.

doi:10.1088/0953-8984/27/7/075801

Cited by 9 publications

(3 citation statements)

References 35 publications

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“…However, from a study combining theory and DLTS, Murawala et al [10] concluded that E3 is a V As . This conclusion was also recently supported by Schultz using DFT (using LDA and PBE) [9]. On the other hand, several authors proposed that the E3 consists of defect pairs: Pons et al [7] and Stievenard [8] using EPR found evidence for the V As -As i , and Bardeleben et al [11] using EPR for the As Ga -V As .…”

Section: Introductionmentioning

confidence: 64%

“…E3a is the most prominent component of E3 and may therefore be the V As which Bondarenko et al [23] predicted to form in undoped GaAs. The latest reports regarding the E3 origin by Schultz [9] supports that E3 is V As.…”

Section: Resultsmentioning

confidence: 94%

“…Lang et al [5] concluded that the origins of the E1 and E2 are Ga i or As Ga , with which Farmer et al [6] agreed. However, the results of Pons et al [7] and Stievenard [8] show that both the E1 and E2 are due to V As while in 2015 Schultz [9] used DFT calculations to prove that these two levels are due to the divacancy. From DLTS results and Hall measurements, Lang [5] and Farmer [6] both proposed that E3 is a V Ga .…”

Section: Introductionmentioning

confidence: 99%

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Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs

Taghizadeh¹,

Ostvar²,

Auret³

et al. 2018

Semicond. Sci. Technol.

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In this paper we used high-resolution Laplace deep-level transient spectroscopy (DLTS) to study the electrical properties of the E3 defect family introduced in GaAs by MeV electron irradiation. We found that the peak conventionally referred to as the E3 contained 3 components which we labeled E3a, E3b and E3c, with E3a being the most prominent component. The activation energy of E3a for different carrier densities varied between 0.36 and 0.375 eV. From dopant dependent introduction rate measurements, we found that the introduction rates of the E3a and E3b defect did not depend on doping density. However, the E3c concentration increased with increasing carrier density. Furthermore, the E3c was found to be metastable: it was reversibly removed during minority carrier injection at low temperatures and re-introduced by annealing above 160 K under zero bias. Interestingly, annealing measurements revealed that, of the three components, the E3b annealed first at around 500 K while both the other components annealed together at a higher temperature of 525 K. By comparing our results with previous studies, we concluded that the origin of E3a is V As, E3b is As i and E3c is V Ga -Si Ga .

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Section: Introductionmentioning

confidence: 64%

Section: Resultsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs

Taghizadeh¹,

Ostvar²,

Auret³

et al. 2018

Semicond. Sci. Technol.

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Theoretical investigation of the electronic and optical properties of gallium-doped hexagonal boron nitride through Monte Carlo and ab initio calculations

Brito

Leite

Azevedo

et al. 2019

Physica E: Low-dimensional Systems and Nanostructures

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Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels

Anders

Lenahan

Edwards

et al. 2018

Journal of Applied Physics

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The performance of silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post-oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities. In this work, we investigate the effect of NO anneals on the interface density of states through density functional theory (DFT) calculations and electrically detected magnetic resonance (EDMR) measurements. EDMR measurements on 4H-silicon carbide (4H-SiC) MOSFETs indicate that NO annealing substantially reduces the density of near interface SiC silicon vacancy centers: it results in a 30-fold reduction in the EDMR amplitude. The anneal also alters post-NO anneal resonance line shapes significantly. EDMR measurements exclusively sensitive to interface traps with near midgap energy levels have line shapes relatively unaffected by NO anneals, whereas the measurements sensitive to defects with energy levels more broadly distributed in the 4H-SiC bandgap are significantly altered by the anneals. Using DFT, we show that the observed change in EDMR linewidth and the correlation with energy levels can be explained by nitrogen atoms introduced by the NO annealing substituting into nearby carbon sites of silicon vacancy defects.

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TheE1–E2 center in gallium arsenide is the divacancy

Cited by 9 publications

References 35 publications

Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs

Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs

Theoretical investigation of the electronic and optical properties of gallium-doped hexagonal boron nitride through Monte Carlo and ab initio calculations

Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels

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