The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

Abstract

The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp2 hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics.

Stability Study of Synthetic Diamond Using a Thermally Controlled Biological Environment: Application towards Long-Lasting Neural Prostheses

“…This indicates that the diamond passivation starts in a less conductive state before stabilizing, meaning an increase in its electrical insulation behavior. It can be assumed that the diamond layer is in a more hydrogenated state after growth, which stabilizes as the hydrogen reacts [ 38 , 39 ].…”

The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

“…Below and above this temperature, the averaging needs to be calculated around other values due to the impact of the stronger influence of the localization effect at lower temperatures. Localized charges have an influence on each aspect of current carriers’ transport through the heterojunction: the ideality factor, barrier’s height, and barrier homogeneity, as well as the series resistance R s [ 6 , 7 ].…”

“…We believe that the electrical conductivity of diamond layers will depend on a graphite-like admixture located mainly on the surface of microcrystallites and therefore on the size of the microcrystallites themselves. Additionally, the diamond layers obtained by CVD methods are generally highly hydrogenated, which also has a large impact on their electrical conductivity as well [ 6 , 7 , 8 ]. It is now well established that a hydrogen-terminated diamond surface exhibits p-type conduction in a subsurface layer without doping [ 8 ], with carrier density around 10 10 –10 13 cm –2 [ 9 ].…”

A Novel Ga2O3 Superjunction LDMOS Using P-Type Diamond with Improved Performance

“…8e). [36][37][38][39] Finally, metal deposition and the annealing are performed to form the source and drain ohmic contacts (Fig. 8f).…”