The hydridation and nitridation of GeSi oxide annealed in ammonia

Liu, W. S.; Nicolet, M.‐A.; Park, Hyung Ho; Koak, Byong-Hwa; Lee, J.‐W.

doi:10.1063/1.360123

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…[5][6][7]45 The formation of Ge nanocrystals when a Si x Ge 1-x O 2 film is annealed in H 2 at temperatures ≥700°C has been confirmed by cross-sectional TEM 6 and crosssectional atomic force microscopy (AFM). 45 In our experiments, analysis of cross-sectional TEM images (Fig.…”

Section: Resultsmentioning

confidence: 75%

“…1 Strained Si x Ge 1-x (100) epilayers on Si(100) have attracted considerable interest because of hole mobility enhancement as well as their compatibility with existing Si-based CMOS technology that makes manufacturing very largescale integrated circuits feasible. 2 However, because of the complex oxidation chemistry 3,4 of Si x Ge 1-x and the instability [5][6][7] of Si x Ge 1-x O 2 , devices have been fabricated with the strained Si x Ge 1-x channel covered with a Si capping layer that is subsequently oxidized to produce the gate oxide. 8 While the Si buffer layer affords a gate oxide (SiO 2 ) with outstanding electrical properties as well as a stable, high-quality Si/SiO 2 interface, it can also result in a parasitic, decreased mobility conduction channel, limiting the ultimate mobility that could be achieved with strained Si x Ge 1-x (100).…”

Section: Introductionmentioning

confidence: 99%

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The electrical properties and stability of the hafnium silicate/Si0.8Ge0.2(100) interface

Addepalli

Sivasubramani

Kim

et al. 2004

Journal of Elec Materi

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The effect of post-oxidation N 2 annealing and post-metallization forming-gas annealing on the electrical properties of Pt/Hf-silicate (3 nm)/Si 0.8 Ge 0.2 (100)/ n-type Si(100) metal-oxide semiconductor (MOS) capacitors is reported. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements of asgrown, 3-nm-thick, hafnium-silicate films containing ϳ12at.%Hf indicate a large number of bulk and interface traps with a current density of ϳ10 Ϫ2 A/cm 2 at V FB ϩ 1 V. Post-ultraviolet (UV)/O 3 oxidation annealing in N 2 at 350°C for 30 min leads to a significant improvement in the electrical characteristics of the film. A post-metallization anneal (PMA) at 450°C for 30 min in forming gas (90% N 2 :10% H 2 ), however, degraded the electrical properties of the films. X-ray photoelectron spectroscopy (XPS) analyses of the forming-gas-annealed films indicate that a possible cause for the degradation in electrical properties is the hydrogen-induced reduction of GeO 2 in the interfacial Si x Ge 1-x O 2 oxide layer to elemental germanium. Implications for the introduction of hafnium silicate as a viable gate dielectric for SiGe-based devices are discussed.

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Section: Resultsmentioning

confidence: 75%

Section: Introductionmentioning

confidence: 99%

The electrical properties and stability of the hafnium silicate/Si0.8Ge0.2(100) interface

Addepalli

Sivasubramani

Kim

et al. 2004

Journal of Elec Materi

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Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap

Esposti

Wuetz

Viviana

et al. 2022

Applied Physics Letters

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We grow 28Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, 28Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K, we measure a high mean mobility of [Formula: see text] cm2/V s and a low mean percolation density of [Formula: see text] cm−2. From the analysis of Shubnikov–de Haas oscillations at T = 190 mK, we obtain a long mean single particle relaxation time of [Formula: see text] ps, corresponding to a mean quantum mobility and quantum level broadening of [Formula: see text] cm2/V s and [Formula: see text] [Formula: see text], respectively, and a small mean Dingle ratio of [Formula: see text], indicating reduced scattering from long range impurities and a low-disorder environment for hosting high-performance spin-qubits.

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Deposition of Hf–silicate gate dielectric on SixGe1−x(100): Detection of interfacial layer growth

Addepalli

Sivasubramani

El-Bouanani

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The deposition of a stable high-κ dielectric material such as hafnium silicate in direct contact with strained epitaxial SixGe1−x(100) layers on Si(100) provides the prospect of eliminating the Si buffer layer that is currently used to form the gate oxide in SiGe-based devices. In this study, ∼3-nm-thick hafnium silicate films were produced by sputter deposition of hafnium silicide films on precleaned SixGe1−x(100), with subsequent UV-O3 oxidation at room temperature. Prolonged UV-O3 exposure at room temperature leads to the growth of an interfacial layer comprised of a mixture of silicon and germanium oxides. We report on the use of x-ray photoelectron spectroscopy, particularly the x-ray excited Ge (L3MM) Auger feature to optimize UV-O3 exposure time, and minimize the interfacial layer growth of silicon and germanium oxides.

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The hydridation and nitridation of GeSi oxide annealed in ammonia

Cited by 4 publications

References 13 publications

The electrical properties and stability of the hafnium silicate/Si0.8Ge0.2(100) interface

The electrical properties and stability of the hafnium silicate/Si0.8Ge0.2(100) interface

Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap

Deposition of Hf–silicate gate dielectric on SixGe1−x(100): Detection of interfacial layer growth

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