“…Such monolithic integration of the devices reduces the number of fabrication steps and consequently the device costs. From this point of view, the use of III-V compound materials is very expensive as compared to the low-cost integration of Ge nanostructures like Ge NCs photodetectors [6]. NCs Various methods have been developed to create Ge NCs in SiO 2 matrix for optoelectronic devices, including precipitation [7], self-assembly [8], annealing [9], ion implantation [10].…”