The High-Temperature Equilibrium Between Silicon Nitride, Silicon and Nitrogen

Hincke, W. B.; Brantley, L. Reed

doi:10.1021/ja01364a008

Cited by 33 publications

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“…The thin film silicon nitrides are attractive for applications in microelectronic and optoelectronic devices, because they perform as gate dielectric layers, intermetal insulators, passivation films, diffusion barriers or optical matching layers [ 213 , 214 ]. The N-Si phase diagram, in Figure 24 , was developed by Ma et al [ 214 ], using Calphad method at 1 atmosphere, taking into consideration the available data [ 215 , 216 , 217 , 218 , 219 , 220 , 221 , 222 ]. At the same pressure, the system exhibits a eutectic reaction of L → Diamond Si + Si 3 N 4 at around 1413.94 °C and 0.012 at % N as demonstrated in the N-Si partial phase diagram for extremely low N concentrations redrawn after Yatsurugi et al [ 32 ] in Figure 25 .…”

Section: Phase Diagramsmentioning

confidence: 99%

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Mostafa

Medraj

2017

Materials

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Fabrication of solar and electronic silicon wafers involves direct contact between solid, liquid and gas phases at near equilibrium conditions. Understanding of the phase diagrams and thermochemical properties of the Si-dopant binary systems is essential for providing processing conditions and for understanding the phase formation and transformation. In this work, ten Si-based binary phase diagrams, including Si with group IIIA elements (Al, B, Ga, In and Tl) and with group VA elements (As, Bi, N, P and Sb), have been reviewed. Each of these systems has been critically discussed on both aspects of phase diagram and thermodynamic properties. The available experimental data and thermodynamic parameters in the literature have been summarized and assessed thoroughly to provide consistent understanding of each system. Some systems were re-calculated to obtain a combination of the best evaluated phase diagram and a set of optimized thermodynamic parameters. As doping levels of solar and electronic silicon are of high technological importance, diffusion data has been presented to serve as a useful reference on the properties, behavior and quantities of metal impurities in silicon. This paper is meant to bridge the theoretical understanding of phase diagrams with the research and development of solar-grade silicon production, relying on the available information in the literature and our own analysis.

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Section: Phase Diagramsmentioning

confidence: 99%

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Mostafa

Medraj

2017

Materials

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“…As well documented, [17][18][19] temperatures above 760 • C may cause a decomposition of the native silicon oxide layer when processed in a nonreactive environment. Original experiments by Funk 20 and Hincke et al 21 used nitrogen as the precursor gas to form silicon nitride films. Murarka et al 10 was the first group to use ammonia as the precursor gas.…”

Section: Discussionmentioning

confidence: 99%

Nitridation of Silicon With Ammonia and Nitrogen

et al. 2010

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Silicon nitride and silicon oxynitride are materials used extensively in mechanical and electronic devices due to their outstanding properties. Thin films of silicon nitride and silicon oxynitride can be deposited on a silicon surface. In this study, nitridation of silicon wafers by a rapid thermal heating process with both nitrogen and ammonia as precursors was investigated by transmission electron microscopy, electron energy loss spectroscopy, and ellipsometry analyses. It was found that, under ammonia gas, the growth of nitride film was limited to 0.5 nm, whilst under the nitrogen atmosphere, a nitride film of 5-10 nm could be formed at 1200 • C. The limited growth in ammonia suggests formation of high-quality passivating layer.

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Corrosion of Ceramic Materials

Opila

Jacobson

2013

Materials Science and Technology

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The sections in this article are Introduction Experimental Techniques Oxidation of Silica‐Formers Properties of Silica Basic Oxidation Mechanisms of Silica Formers Oxidation of Silicon Oxidation of Pure Si C in Dry Oxygen Oxidation of Pure Si 3 N 4 in Dry Oxygen Oxidation of Si C and Si 3 N 4 in the Presence of Low Level Impurities Oxidation of Si C and Si 3 N 4 Containing Sintering Aids Oxidation of Silica Formers in Other Oxidants Oxidation of Si , Si C , and Si 3 N 4 in Water Vapor Oxidation of Si C in CO 2 Cyclic Oxidation of Silica‐Formers Effect of Oxidation on Fracture Strength of Silica‐Formers Volatility Direct Vaporization Oxide–Substrate Reactions Active Oxidation Molten Salt Corrosion Refractory Oxide Coatings on Silica‐Forming Ceramics Oxidation of Alumina‐Forming Non‐oxides Oxidation of AlN Oxidation of Al 4 C 3 Boria‐Forming Ceramics Transition Metal Carbides and Nitrides Transition Metal Carbides Transition Metal Nitrides Oxidation of Ceramics Forming Multi‐Component Scales Mixed Oxide Scales Transition Metal Borides Oxidation of Complex Systems Resulting in Mixed Oxide Scales Composites which form Compound Oxides SiC‐Reinforced Al 2 O 3 Si 2 N 2 OZrO 2 Ti B 2  Al 2 O 3 Composites which form Single Phase Oxide Solid Solutions Ceramic Matrix Composites Summary

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The High-Temperature Equilibrium Between Silicon Nitride, Silicon and Nitrogen

Cited by 33 publications

References 0 publications

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Nitridation of Silicon With Ammonia and Nitrogen

Corrosion of Ceramic Materials

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