The High Q Factor Lateral Field–Excited Thickness Shear Mode Film Bulk Acoustic Resonator Working in Liquid

Chen, Da; Ren, Wenwen; Song, Shuren; Wang, Jingjing; Liu, Weihui; Wang, Peng

doi:10.3390/mi7120231

Cited by 13 publications

(7 citation statements)

References 17 publications

(17 reference statements)

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“…Higher order modes of the Lamb waves rather than the S 0 modes can achieve better sensitivity for applications due to their high phase velocity, low phase velocity dispersion, and lower impedance. 149 Tao et al 140 reported a flexible ZnO/Al acoustic device that can excite both the lamb wave mode and LFE-TSM mode individually at their resonant frequencies, enabling to perform sampling, patterning, and biosensing selectively in a single device. Lamb waves were excited for sample dilution and transport by adjusting the input SAW power, while the LFE-TSM waves enabled particles patterning by agitating fundamental orders with low input power as well as biosensing by monitoring the frequency shifts for higher order waves (Fig.…”

Section: Flexible Saw Devices Based On the Lamb Wavementioning

confidence: 99%

Surface acoustic wave based microfluidic devices for biological applications

et al. 2023

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Section: Flexible Saw Devices Based On the Lamb Wavementioning

confidence: 99%

Surface acoustic wave based microfluidic devices for biological applications

et al. 2023

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“…the thickness‐extensional mode (TE), since c ‐axis ZnO was used for the PZE layer. The shear mode gets generated in two cases; by lateral excitation, in which we align both the electrodes parallel to the PZE film surface or by depositing the c ‐axis tilted ZnO film as a PZE layer, both of these are not the case here [10 ]. In addition to the modal analysis, the harmonic analysis was done to obtain the impedance characteristic and the quality factor ( Q ) of FBAR.…”

Section: Device Structure and Simulationmentioning

confidence: 99%

Active area optimisation of film bulk acoustic resonator for improving performance parameters

Patel¹,

Adhikari

Boolchandani

2020

Electron. lett.

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In this Letter, an active area optimisation technique to improve the performance parameters of the film bulk acoustic resonator (FBAR) is proposed. The active area of the back trench membrane‐based FBAR is optimised to remove the spurious modes, higher harmonic modes, and to confine the acoustic signal at its central part during the resonance. The effect of thickness variation of SiO2 layer on the performance parameters was studied using finite‐element analysis (FEA) simulation. The SiO2 film, on silicon substrate, was used as the support layer and zinc oxide was used as the piezoelectric film for the resonator. The authors have successfully demonstrated the FBAR through FEA for an optimised active area of 320 × 320 µm2, series resonance frequency (f s ) 1.249 GHz, and parallel resonance frequency (f p ) 1.273 GHz with an effective electromechanical coupling coefficient false(keff2false) of 4.65%.

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“…Among these four materials, AlN has the highest acoustic wave velocity and excellent thermal conductivity [ 15 , 16 ]. Therefore, various AlN-based resonators have been reported, such as flexural mode resonators [ 17 ], film bulk acoustic wave resonators (FBAR) [ 18 ], contour mode resonators [ 19 ], and lamb wave resonators [ 20 ]. Different modes have different frequency ranges; for contour mode, the main frequency is around 10 MHz to 10 GHz, while that of flexural mode is often smaller than 10 MHz.…”

Section: Introductionmentioning

confidence: 99%

Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Fei

Ren

2021

Micromachines

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As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is −25 ppm/°C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be −9.1 ppm/°C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.

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The High Q Factor Lateral Field–Excited Thickness Shear Mode Film Bulk Acoustic Resonator Working in Liquid

Cited by 13 publications

References 17 publications

Surface acoustic wave based microfluidic devices for biological applications

Surface acoustic wave based microfluidic devices for biological applications

Active area optimisation of film bulk acoustic resonator for improving performance parameters

Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

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