We present a theory of the Anomalous Hall Effect (AHE) in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of the anomalous Hall conductivity in this system can be attributed to a phase that a hole gains when hopping around closed-loop paths in the presence of spin-orbit interactions and background magnetization of the localized Mn moments. Mapping the problem to a random resistor network, we derive an analytic expression for the macroscopic anomalous Hall conductivity σ AH xy . We show that σ AH xy is proportional to the first derivative of the density of states ̺(ǫ) and thus can be expected to change sign as a function of impurity band filling. We also show that σ AH xy depends on temperature as the longitudinal conductivity σxx within logarithmic accuracy.PACS numbers: 75.50. Pp,73.50.Jt,72.20.Ee Diluted magnetic semiconductors (DMS) are very interesting new materials, still not understood in full detail. Although it is well accepted that the origin of ferromagnetism in Ga 1−x Mn x As, the most thoroughly studied DMS, is a hole-mediated effective interaction between the localized S = 5/2 Mn spins, the appropriate description of this interaction, and a closely related question of the nature of hole carriers, are still controversial issues. Samples with the highest Curie temperatures show metallic behavior [1] and are well described by the valenceband hole-fluid model [2]. On the other hand, for low Mn concentrations, i.e. when x is less than about 0.03, (Ga,Mn)As is insulating and the hole transport likely occurs in the Mn impurity band [3]. The low-temperature conduction in this case is by phonon-assisted hopping.Anomalous Hall Effect (AHE) has been an important characterization tool for itinerant ferromagnets [4,5,6] and played an important role in the experimental study of DMS ferromagnetism as well [7]. Experimentally AHE is manifested as an additional term in the Hall resistivity of the sample, usually assumed to be proportional to the magnetization:Standard theories of AHE in metallic ferromagnets [4,6] attribute it to the modification of impurity scattering in the presence of spin-orbit interactions. Recently, however, it was realized that a purely geometrical mechanism of AHE is possible [8,9,10,11]. In particular, a k-space Berry phase theory of AHE [8] has been proposed, and applied specifically to (Ga,Mn)As in the metallic transport regime. This theory is very successful in describing AHE in metallic (Ga,Mn)As, and we believe that the Berry-phase mechanism of AHE should be relevant in general for all itinerant ferromagnets. In this Letter we propose an analogous geometricalphase theory of AHE in (Ga,Mn)As, but in the case when conduction is by hopping between strongly localized states in the impurity band, rather than through extended valence-band states. Our approach is based on a modified Holstein's theory of the Hall effect in hopping conduction [12] (for related w...