The Growth of the MBE III–V Compounds and Alloys

Grange, J. D.

doi:10.1007/978-1-4899-5364-3_3

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“…The congruent sublimation temperature T cs defines the temperature above which a given compound loses stability and higher rates of desorption occur [56]. In ternary compounds, this may lead to variation in the composition, as desorption conditions are material and species specific.…”

Section: Lattice Incorporationmentioning

confidence: 99%

High power mid-wave and long-wave infrared light emitting diodes

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High brightness light emitting diodes based on the InAs/GaSb superlattice material system have been developed for use in mid-wave and long-wave infrared optoelectronic systems. By employing a multiple-active region device configuration, high optical output has been demonstrated from devices in the 3-5 µm and 7-12 µm spectral bands. Mid-wave infrared optical output in excess of 0.95 mW/sr has been observed from 120×120 µm 2 devices with peak emission at 3.8 µm, and nearly 160 µW/sr has been measured from devices of the same size operating at 8 µm. Larger devices (1×1 mm 2) with output as high as 8.5 mW/sr and 1.6 mW/sr have been demonstrated with midwave and long-wave devices, respectively, under quasi-DC bias conditions. in the tunnel junctions.

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Section: Lattice Incorporationmentioning

confidence: 99%

High power mid-wave and long-wave infrared light emitting diodes

Koerperick¹

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The Growth of the MBE III–V Compounds and Alloys

Cited by 1 publication

References 59 publications

High power mid-wave and long-wave infrared light emitting diodes

High power mid-wave and long-wave infrared light emitting diodes

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