Articles you may be interested inElectronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation J. Appl. Phys. 110, 054320 (2011); 10.1063/1.3633508 Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states Appl. Phys. Lett. 90, 053109 (2007); 10.1063/1.2437063Carrier spin dynamics in modulation-doped In As ∕ Ga As quantum dots
The authors report measurements of hole spin relaxation in neutral InGaAs quantum dots using polarization-dependent time-resolved photoluminescence experiments. The single-particle hole spin relaxation was isolated from other spin flip processes in the electron-hole system by detecting the initial transfer of population from optically active to dark states. The results indicate that electron-hole exchange interactions play a negligible role in the carrier spin kinetics, and are consistent with a mechanism of hole spin relaxation via phonon-mediated virtual scattering between confined quantum dot states.
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