The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy

Farrow, R. F. C.; Robertson, D. S.; Williams, Gary A.; Cullis, A. G.; Jones, G. R.; Young, Iain M.; Dennis, Peter

doi:10.1016/0022-0248(81)90506-6

Cited by 243 publications

(67 citation statements)

References 18 publications

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“…This indicates that diffusion of In into the film may persist despite the Te buffer layer. Interdiffusion of In can be further enhanced by formation of metallic In islands that accompanies InSb substrate surface preparation via sputtering and annealing 36 . Furthermore, Te seems to act as a n-type dopant (as it does in group-IV semiconductors like Si and Ge 37 ), or, it is at least able to compensate intrinsic p-type doping that is likely to be caused by the interdiffusion of In atoms from the substrate into the film 2 .…”

Section: Atomic Surface Structurementioning

confidence: 99%

Topological surface state of α−Sn on InSb(001) as studied by photoemission

et al. 2018

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We report on the electronic structure of the elemental topological semimetal α-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional p-type doping of the as-grown films was compensated by deposition of potassium or tellurium after the growth, thereby shifting the Dirac point of the surface state below the Fermi level. We show that, while having the potential to break time-reversal symmetry, iron impurities with a coverage of up to 0.25 monolayers do not have any further impact on the surface state beyond that of K or Te. Furthermore, we have measured the spin-momentum locking of electrons from the TSS by means of spin-resolved photoemission. Our results show that the spin vector lies fully in-plane, but it also has a finite radial component. Finally, we analyze the decay of photoholes introduced in the photoemission process, and by this gain insight into the many-body interactions in the system. Surprisingly, we extract quasiparticle lifetimes comparable to other topological materials where the TSS is located within a bulk band gap. We argue that the main decay of photoholes is caused by intraband scattering, while scattering into bulk states is suppressed due to different orbital symmetries of bulk and surface states.

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Section: Atomic Surface Structurementioning

confidence: 99%

Topological surface state of α−Sn on InSb(001) as studied by photoemission

et al. 2018

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“…Prior studies have shown that stanene films can be prepared by depositing Sn on selected substrates including Bi2Te3, Sb(111), and Bi(111) [20][21][22] [25,26]. Here, using reflection high-energy electron diffraction (HREED) and angle-resolved photoemission spectroscopy (ARPES), we show that a high-quality single Sn layer can be grown on the (111)B-face of InSb (the B face is Sb-terminated, while the A face is In-terminated).…”

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confidence: 99%

Gapped electronic structure of epitaxial stanene on InSb(111)

Chan

Chen

et al. 2018

Phys. Rev. B

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Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications.Here, we report a study of stanene epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb( 111) is a strong contender for electronic QSH applications.

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“…The lattices of -Sn and InSb are nearly matched, but a slight mismatch results in an in-plane compressive strain of 0.14% for the -Sn overlayer [19,31]. The crystal structure of (111)-oriented -Sn films is shown in Fig.…”

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Elemental Topological Dirac Semimetal: α -Sn on InSb(111)

et al. 2017

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Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. Using angle-resolved photoemission spectroscopy (ARPES), we have observed such bulk Dirac cones in epitaxially-grown 𝛼-Sn films on InSb(111), the first such TDS system realized in an elemental form. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator (TI) phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.

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The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy

Cited by 243 publications

References 18 publications

Topological surface state of α−Sn on InSb(001) as studied by photoemission

Topological surface state of α−Sn on InSb(001) as studied by photoemission

Gapped electronic structure of epitaxial stanene on InSb(111)

Elemental Topological Dirac Semimetal: α -Sn on InSb(111)

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