Gapped electronic structure of epitaxial stanene on InSb(111)

Xu, Caizhi; Chan, Yang-Hao; Chen, Peng; Wang, Xiaoxiong; Flötotto, David; Hlevyack, Joseph A.; Bian, Guang; Mo, S.-K.; Chou, M. Y.; Chiang, T.‐C.

doi:10.1103/physrevb.97.035122

Cited by 98 publications

(85 citation statements)

References 38 publications

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“…Therefore, we can construct a phase diagram predicting the thermal stability of epitaxial α‐Sn films on InSb substrates. The creditable high thermal stability of very thin films is favorable for higher growth temperatures and various experimental treatments, such as post‐growth annealing . We have proved that strain can be utilized to engineer the thermal stability of α‐Sn, and this method can be extended to other metastable films.…”

Section: The Summary Of Related Parameters Including Nominal Thicknementioning

confidence: 92%

Thermal Stability Enhancement in Epitaxial Alpha Tin Films by Strain Engineering

et al. 2019

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Exploring new topological materials with large topological nontrivial bandgaps and simple composition is attractive for both theoretical investigation and experimental realization. Recently, alpha tin (α-Sn) has been predicted to be such a candidate, and it can be tuned to be either a topological insulator or a Dirac semimetal by applying appropriate strain. However, freestanding α-Sn is only stable below 13.2 C. Herein, a series of high-quality α-Sn films with different thicknesses are successfully grown on InSb substrates by molecular beam epitaxy (MBE). Confirmed by both X-ray diffraction (XRD) and reciprocal space mapping (RSM), all the films remain fully strained up to 400 nm, proving the strain effect from the substrate. Remarkably, the single-crystalline α phase can persist up to 170 C for the 20 nm thick sample. The critical temperature where the α phase disappears decreases as the film thickness increases, showing that the thermal stabilization can be engineered by varying the α-Sn thickness. A plastic flow model considering work hardening is introduced to explain this dependence, assuming that the strain relaxation and the phase transition occur successively. This enhanced thermal stability is prerequisite for aforementioned roomtemperature characterization and practical application of this material system.The diamond-structured allotrope of tin (alpha tin [α-Sn]), also known as gray tin, has attracted increasing research interest recently for its topological characters when the cubic symmetry is broken. [1][2][3][4][5][6] The advantages of this material are attributed to its simple structure and large tunable nontrivial bandgap. [2][3][4][5][6][7][8][9][10][11][12]

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Section: The Summary Of Related Parameters Including Nominal Thicknementioning

confidence: 92%

Thermal Stability Enhancement in Epitaxial Alpha Tin Films by Strain Engineering

et al. 2019

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“…Within this number are group 15 and 16 elements herein including recently reported antimonene, selenene, and tellurene (but not epitaxial phosphorene as previously argued, whereas the case of bismuthene is still under survey). With a similar concept in mind, stanene can be derived seemingly by reducing the thickness of slightly distorted α‐Sn ultrathin film as grown on InSb(111) substrates down to the 2D state . Owing to the intrinsic hexagonal symmetry of the crystal lattice, these kinds of Xenes can be epitaxially grown in the 2D form with no compulsory commensurability constraints as in the case of group 14 Xenes.…”

Section: Epitaxial Methodologies Commensurate Substrates and Drivinmentioning

confidence: 99%

“…2D tin (equivalently termed stanene, stannene, or tinene) was considered to be the more promising candidate to access a quantum spin Hall state, displaying a theoretically sizeable energy spin‐orbit‐induced gap (100 meV possibly extendable by functionalization) . At the moment, due to the hexagonal symmetry of (111) surfaces, several achievements about 2D tin growth lead to the realization of (metallic) stanene on Bi 2 Te 3 , copper, InSb, antimony, and silver, the two latter cases offering common templates with silicene and germanene . It should be also noticed that a stanene‐like configuration was also approached by epitaxial thinning tin film with a slightly distorted α‐phase (reckoned as the 3D counterpart of stanene) on nearly matched InSb(111) substrates, therein displaying Dirac‐like electronic bands in the multilayer regime .…”

Section: Xenes: First Generationmentioning

confidence: 99%

The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials

Grazianetti

Martella

Molle

2019

Physica Rapid Research Ltrs

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Xenes are two‐dimensional monoelemental materials beyond graphene ranging from silicene through borophene and to tellurene. Allessandro Molle and co‐workers (article number http://doi.wiley.com/10.1002/pssr.201900439) review the rise of the Xenes and classify them in two generations from its early stage up to now. The attention is specifically paid to the epitaxial methodologies for the Xene synthesis approaches and to key‐characteristics, like scalability, quality, and stability, which enable the Xenes integration into diverse nanotechnology platforms.

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“…ARPES measurements revealed a gap of 0.44 eV which is adequately larger than that expected for free‐standing stanene. The large bandgap of stanene relative to the bulk can be explained as a result of quantum confinement …”

Section: Realizing 2d Tin Filmsmentioning

confidence: 99%

Stanene: A Promising Material for New Electronic and Spintronic Applications

Lyu

Zhang

et al. 2019

Annalen der Physik

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The attractive mechanical and electronic properties of freestanding graphene has led to the exploration of two-dimensional (2D) materials which can be integrated with contemporary electronics. As a 2D analog of graphene, stanene has become a hopeful candidate for 2D films due to its excellent quantum effects, superconductivity, and thermoelectric properties. Focusing on the promising 2D elemental material stanene, the fundamental electronic properties and experimental preparation of this material are reviewed. The prospects of utilizing the ability to manipulate the electronic properties of stanene for nanoelectronic and optoelectronic applications are determined.

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Gapped electronic structure of epitaxial stanene on InSb(111)

Cited by 98 publications

References 38 publications

Thermal Stability Enhancement in Epitaxial Alpha Tin Films by Strain Engineering

Thermal Stability Enhancement in Epitaxial Alpha Tin Films by Strain Engineering

The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials

Stanene: A Promising Material for New Electronic and Spintronic Applications

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