The growth of cadmium sulphide from the vapour phase — Optimum growth conditions

Ballentyne, D. W. G.; Rouse, L.M.; White, E. A. D.

doi:10.1016/0022-0248(76)90261-x

Cited by 8 publications

(4 citation statements)

References 10 publications

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“…Thus crystals grown under sulphur rich conditions (and therefore having (11.0) growth faces) are expected to contain relatively little excess sulphur in the lattice. It has already been shown (BALLENTYNE et al 1976) that, on the (11.2) surface (the most common growth face for the material when growth proceeds under steady state conditions) sulphur is not readily incorporated into the lattice by increasing the proportion of this species in the vapour. We now see that excessive sulphur in the vapour is expected to cause a habit change from (11.2) to (11.0) and again, little excess sulphur will be taken up.…”

Section: Discussionmentioning

confidence: 99%

“…Typical BALLENTYNE et al 1970BALLENTYNE et al , 1976FAKTOR et al 1971b). The experiments performed by BALLENTYNE et al…”

Section: The Growth Systemmentioning

confidence: 99%

“…i) PI and Pz can be calculated as functions of x (BALLENTYNE et al 1970(BALLENTYNE et al , 1976FAKTOR et al 1971 b ) ; ii) P: and P: have been measured as functions of temperature (LORENTZ) (and hence x) for the case of stoichiometric solid. The fact that crystals having (11.0) growth faces are expected to be nearly stoichiometric will be discussed in the next secion.…”

Section: (17)mentioning

confidence: 99%

“…The growth of cadmium sulphide crystals with rough (11.2) growth faces has however been treated with reference to the surface crystallography (BALLENTYNE et al 1976). The present paper extends this work to the case of low free-energy growth faces, and the way in which the orientation of the growth face is determined by growth conditions is studied.…”

Section: Introductionmentioning

confidence: 99%

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Growth from the vapour by surface nucleation

Rouse

1977

Cryst Res and Technol

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The experimental conditions under which cadmium sulphide is grown from the vapour to form crystals having a (11.0) singular growth faces are calculated. This is done assuming that growth proceeds on these faces by one-dimensional surface nucleation. Calculations based on this assumption are compared with experimenhl observations on the habit of CdS, and the relationship between growth rate and supersaturation, and shown to be consistent with these.Les conditions pour la croissance en phase vapeur de cristaux de CdS ayant les faces singulihes (1 1.0) sont calculkes. On a suppos6 que la croissance le faisant sur ces faces par un germination liniaire. Ces calculs sont compares avec les observations experimentales sur la forme de CdS, et aussi avec la relation entre la vitesse de croissance et la supersaturation. Un bon accord est obtenu.

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Section: Discussionmentioning

confidence: 99%

“…Typical BALLENTYNE et al 1970BALLENTYNE et al , 1976FAKTOR et al 1971b). The experiments performed by BALLENTYNE et al…”

Section: The Growth Systemmentioning

confidence: 99%

Section: (17)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Growth from the vapour by surface nucleation

Rouse

1977

Cryst Res and Technol

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Self‐Assembly in Hopper‐Shaped Crystals

Yang

Zhang

et al. 2019

Adv Funct Materials

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Hopper shape is a special type of crystal morphology. Hopper‐shaped crystals possess unique properties and show promise in many different applications. The understanding of how the building blocks (atoms, ions, and molecules) assemble into hopper‐shaped crystals and how the environmental factors influence the assembly process is critical to the properties and applications of hopper‐shaped crystals. In this review, the important interfacial instability theories that outline the underlying mechanisms for the formation of hopper‐shaped crystals are discussed. Next, the relevant experimental developments based on three categories of synthetic approaches are discussed: the growth through the control of the solute concentration, the temperature gradient, and the capping agent. At the end of the review, the applications, opportunities, and potential challenges of the hopper‐shaped crystals are discussed.

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The Growth of Large Crystals from the Vapor Phase

Schönherr

1980

Crystals

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The growth of cadmium sulphide from the vapour phase — Optimum growth conditions

Cited by 8 publications

References 10 publications

Growth from the vapour by surface nucleation

Growth from the vapour by surface nucleation

Self‐Assembly in Hopper‐Shaped Crystals

The Growth of Large Crystals from the Vapor Phase

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