2016
DOI: 10.1039/c5cy01651g
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The growth mode of ZnO on HZSM-5 substrates by atomic layer deposition and its catalytic property in the synthesis of aromatics from methanol

Abstract: The resulting ZnO film on zeolites could effectively prevent exposing the HZSM-5 framework to steam during the reaction and regeneraton processes.

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Cited by 28 publications
(14 citation statements)
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“…The epitaxial growth of the silicalite-1 shell is along the outside surface of the Z5 crystal. 15 , 34 STEM and EDS mapping analysis on the core–shell-structured Zn/Z5@S1 zeolite are given in Fig. 2c–h .…”
Section: Resultsmentioning
confidence: 99%
“…The epitaxial growth of the silicalite-1 shell is along the outside surface of the Z5 crystal. 15 , 34 STEM and EDS mapping analysis on the core–shell-structured Zn/Z5@S1 zeolite are given in Fig. 2c–h .…”
Section: Resultsmentioning
confidence: 99%
“…The XPS photo line of a pure ZnO sample as a reference is also reported, showing a binding energy (BE) of 1020.8 eV. [29] Zn species in both samples expressed higher BE than that of pure ZnO. Owing to the strong interaction between zinc and protonic acid sites a high binding energy is observed.…”
Section: Resultsmentioning
confidence: 91%
“…To study the nature of Zn species impregnated on microporous and mesoporous ZSM‐5 samples, XPS spectra of the Zn(2p 3/2 ) region were recorded (Figure 4). The XPS photo line of a pure ZnO sample as a reference is also reported, showing a binding energy (BE) of 1020.8 eV [29] . Zn species in both samples expressed higher BE than that of pure ZnO.…”
Section: Resultsmentioning
confidence: 92%
“…The last heterojunctions that we will examine are the piezotronic principles in piezoelectric semiconductor/solution and piezoelectric semiconductor/insulator/solution systems ( Figure a). These interfaces are studied for use in a wide range of applications, including energy storage (e.g., batteries and capacitors), energy conversion (e.g., photo‐electrochemical cells), and materials synthesis (e.g., electrochemical deposition) . Analyzing the semiconductor/insulator/solution interface is similar to the case of the semiconductor/insulator/semiconductor heterojunction except that the expression for charge density will no longer depend on material band gaps and the density of immobile, ionized donor atoms as is the case within semiconductors.…”
Section: Two‐junction Piezotronic Systems: Piezoelectric Semiconductomentioning
confidence: 99%