The growth mechanism of silicon nanowires and their quantum confinement effect

Ultrananocrystalline Diamond-Decorated Silicon Nanowire Field Emitters

“…The broadening of the D peak can be attributed to the phonon confinement effect due to the small grain size of UNCD (∼5 nm). 42 The highly optically absorbing sp 2 -bonded carbon precludes observation of the sp 3 Raman signal since the visible Raman is about 50−250 times more sensitive to sp 2 -bonded carbon than to the sp 3 -bonded carbon. 43 The band around 1600 cm −1 corresponds to sp 2 - hybridized carbon indicating the presence of graphitic carbon accumulated at the grain boundaries.…”

Silicon nanowires grown from silicon monoxide under hydrothermal conditions

“…SiNWs are attracting a great deal of attention due to their fundamental significance and potential applications in nanoscale electronic devices such as single-electron detector and counter [4,5], single-electron memory cell [6], field effect transistors (FETs) [7,8] and nanoscale sensors [9,10]. Different methods have been developed to synthesize SiNWs including laser ablation metal-catalytic method [1][2][3], chemical vapor deposition (CVD) [11][12][13], thermal vapor deposition [14,15] and organic solution-grown method [16,17]. Organic solutiongrown method is a kind of new and promising method to synthesize SiNWs because the method takes advantage of great chemical flexibility and synthetic tenability [18].…”

Nanowire formation during catalyst assisted chemical vapor deposition

“…For the case of the Si nanowire nucleation on a Si substrate using Fe as catalyst, the typical growth conditions are T = 1473 K and P c = 1.4 Torr. 20 The surface energy density of the silicon nanowire is nv = 1.610 J / m 2 , 21 and the liquid-catalyst surface energy density cv is 0.885 J / m 2 . 22 Note that the used Fe-Si phase diagram is from Ref.…”