The Growth and Optical Properties of ZnO Nanowalls

Brewster, Megan; Lu, Ming-Yen; Lim, Sang-Kyu; Smith, Matthew J.; Zhou, Xiang; Gradečak, Silvija

doi:10.1021/jz2008775

Cited by 38 publications

(22 citation statements)

References 43 publications

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“…Coalescence of closely spaced GaN nanowires has been reported [24,25]. In addition, the evolution of ZnO nanowires to nanowall was directly observed on an Au-coated sapphire substrate as growth continues [26]. Electron diffraction patterns taken from the Si substrate, AlN/GaN multilayer, and GaN are presented in Figure 5b.…”

Section: Resultsmentioning

confidence: 95%

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

Zhong

Hane

2012

Nanoscale Res Lett

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GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining.

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Section: Resultsmentioning

confidence: 95%

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

Zhong

Hane

2012

Nanoscale Res Lett

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“…From this figure, it can be seen that the Au nanoparticles are located close to the ZnO-SiC interface. The presence of Au nanoparticle at the ZnO/substrate interface is well documented in the literature [10,15-17,21]. However, the exact mechanism responsible for the growth process of such diverse nanostructures is not fully understood.…”

Section: Resultsmentioning

confidence: 99%

Controlled growth of 1D and 2D ZnO nanostructures on 4H-SiC using Au catalyst

et al. 2014

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A perfect control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic device/systems. In this article, we demonstrate the growth of various ZnO-derived nanostructures, including well-ordered arrays of high aspect ratio single crystalline nanowires with preferred growth direction along the [0001] axis, nanowalls, and hybrid nanowire-nanowall structures. The growths of the various ZnO nanostructures have been carried out on SiC substrates in a horizontal furnace, using Au thin film as catalyst. From experimental observations, we have ascribed the growth mechanisms of the different ZnO nanostructures to be a combination of catalytic-assisted and non-catalytic-assisted vapor–liquid-solid (VLS) processes. We have also found that the different ZnO nanoarchitectures' material evolution is governed by a Zn cluster drift effects on the SiC surface mainly driven by growth temperature. Au thin film thickness, growth time, and temperature are the parameters to optimize in order to obtain the different ZnO nanoarchitectures.

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“…Kim et al [14] showed a vertical honeycomb-like pattern of ZnO nanowall networks grown on a GaN/ c -Al 2 O 3 substrate with the help of a Au catalyst. Brewster et al [15] reported the growth of ZnO nanowalls on an a -plane sapphire substrate coated with a 1-nm-thick Au film at 1000 °C. Until now, only a few papers have reported applications for ZnO nanowall structures.…”

Section: Introductionmentioning

confidence: 99%

Simple Fabrication Process for 2D ZnO Nanowalls and Their Potential Application as a Methane Sensor

Chen

Chang

Hung

et al. 2013

Sensors

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Two-dimensional (2D) ZnO nanowalls were prepared on a glass substrate by a low-temperature thermal evaporation method, in which the fabrication process did not use a metal catalyst or the pre-deposition of a ZnO seed layer on the substrate. The nanowalls were characterized for their surface morphology, and the structural and optical properties were investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and photoluminescence (PL). The fabricated ZnO nanowalls have many advantages, such as low growth temperature and good crystal quality, while being fast, low cost, and easy to fabricate. Methane sensor measurements of the ZnO nanowalls show a high sensitivity to methane gas, and rapid response and recovery times. These unique characteristics are attributed to the high surface-to-volume ratio of the ZnO nanowalls. Thus, the ZnO nanowall methane sensor is a potential gas sensor candidate owing to its good performance.

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The Growth and Optical Properties of ZnO Nanowalls

Cited by 38 publications

References 43 publications

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

Controlled growth of 1D and 2D ZnO nanostructures on 4H-SiC using Au catalyst

Simple Fabrication Process for 2D ZnO Nanowalls and Their Potential Application as a Methane Sensor

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