The future of gold in electronics

Ellis, Timothy W.

doi:10.1007/bf03215518

Cited by 25 publications

(13 citation statements)

References 12 publications

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“…The Gold-based materials have gained increasing attention in recent years because of its potential application, as amorphous alloys with concentration range from 30 to 80 at.% Ga [1] and as wire bond, flip chip and off wafer interconnections due to its corrosion resistance, ability to form metallurgical bonds by soldering or cold welding, and ease of fabrication [2][3][4]. The thermodynamic descriptions of relevant alloy systems containing gallium are of crucial importance for understanding the physical properties, chemical behavior and the technological applications of the alloys or compounds.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic assessment of the Au–Ga system

Guo

2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Thermodynamic assessment of the Au–Ga system

Guo

2010

Journal of Alloys and Compounds

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“…An alternative wire material to gold is copper, which is much cheaper, has several technical benefits including better electrical conductivity, and has been widely used in discrete and power devices with wire diameters typically larger than 30 μm in diameter for many years. The potentials and cost considerations of finding an alternative to replace gold wire bonding in microelectronic packaging are driven by new technologies coming to the market [1]. Copper wire bonding appears to be the alternate materials, and various engineering studies on copper wire deployment have been reported [2,3].…”

Section: Introductionmentioning

confidence: 99%

Extended reliability of gold and copper ball bonds in microelectronic packaging

Gan

Francis²,

Chan³

et al. 2013

Gold Bull

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Wire bonding is the predominant mode of interconnection in microelectronic packaging. Gold wire bonding has been refined again and again to retain control of interconnect technology due to its ease of workability and years of reliability data. Copper (Cu) wire bonding is well known for its advantages such as cost-effectiveness and better electrical conductivity in microelectronic packaging. However, extended reliabilities of Cu wire bonding are still unknown as of now. Extended reliabilities of Au and Pd-coated Cu (Cu) ball bonds are useful technical information for Au and Cu wire deployment in microelectronic packaging. This paper discusses the influence of wire type and mold compound effect on the package reliability and after several component reliability stress tests. Failure analysis has been conducted to identify its associated failure mechanisms after the package conditions for Au and Cu ball bonds. Extended reliabilities of both wire types are investigated after unbiased HAST (UHAST), temperature cycling (TC), and high-temperature storage life test (HTSL) at 150, 175, and 200°C aging temperatures. Weibull plots have been plotted for each reliability stress. Obviously, Au ball bond is found with longer time to failure in unbiased HAST stress compared to Cu ball bonds for both mold compounds. Cu wire exhibits equivalent package and or better reliability margin compared to Au ball bonds in TC and HTSL tests. Failure mechanisms of UHAST and TC have been proposed, and its mean time to failure (t 50 ), characteristic life (t 63.2 , η), and shape parameter (ß) have been discussed in this paper. Feasibility of silver (Ag) wire bonding deployment in microelectronic packaging is discussed at the last section in this paper.

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“…In the areas of science and technology, gold has been used in biomedical applications, catalysis, electrochemical applications, nanotechnology, electronics, etc [2][3][4][5][6][7][8][9][10][11][12][13][14]. Significantly, gold has a great potential to be used in semiconductor devices, but its usage is still limited to bonding applications [15,16].…”

Section: Introductionmentioning

confidence: 99%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.

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The future of gold in electronics

Cited by 25 publications

References 12 publications

Thermodynamic assessment of the Au–Ga system

Thermodynamic assessment of the Au–Ga system

Extended reliability of gold and copper ball bonds in microelectronic packaging

Recent progress in gold nanoparticle-based non-volatile memory devices

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