The formation of trench-gate power MOSFETs with a SiGe channel region

Abstract

The fabrication of trench-gate power MOSFETs with a SiGe channel region has been proposed to further improve the device performance. A larger Ge mole fraction of Si 1−x Ge x may cause a smaller on-state resistance but more degradation of the blocking voltage. A proper Ge mole fraction of 0.2 may be available, implementing a device with a blocking voltage of 30 V and a specific on-state resistance of about 0.70 cm. On the other hand, a gradually changed Ge mole fraction of the Si 1−x Ge x channel region may be employed to enhance the electric field in the channel region, and a specific on-state resistance of about 0.68 cm can be achieved. Moreover, for this device with a SiGe channel region, a thin n-SiGe layer may be used in the drain near the channel region. This scheme can even yield a specific on-state resistance of only about 0.66 cm which is 10% smaller than that caused by a conventional Si-channel device with the same process parameters.

70.1: Invited Paper: Large-Sized Full Color AMOLED TV : Advancements and Issues

“…For example, lightly-doped-drain (LDD) implantation is required on polycrystalline-Si TFT to reduce the off current of the TFT which causes severe vertical crosstalk in the display. This involves expensive ion implantation and large number of mask sets for TFT fabrication compared to LCD [11], and it also still needs simpler process and architecture. In conclusion, in order to succeed in the driving AMOLED from research to development, we have to adopt a route that makes a TFT having a performance of poly-crystalline Si TFT with a conventional a-Si TFT process.…”

Modeling and Simulation of Power MOSFET Using Orcad-Pspice

“…To accurately reproduce the behavior of the trench MOSFETs in real circuit operation, we have carefully chosen the physical models and model parameters used in Spice simulation, such as carrier mobility and lifetime. The trench MOSFET model was validated by comparing to measurement data of real devices [5].…”

Modeling and simulation of power trench MOSFET with SiGeC-based channel

“…For example, UMOSFET (SiGe) is a UMOSFET with SiGe-channel. The basic models of SiGeC material had been researched in a reported paper [9]. Here, the additional remarks about SiGeC are included as belo\v.…”