We have developed polymer LED displays using ink jet printing without visible swathe marks which can be observed during display operation. In addition, we have also developed a singlepass printing technology for hole-conduction layer deposition to significantly reduce the complexity of interlacing printing across the panel which is known as an alternative to remove the swathe mark..
We have demonstrated a 40‐inch diagonal, full color WXGA AMOLED TV. It was based on the technologies of amorphous silicon (a‐Si) TFT backplane and white OLED with color filter. Despite of recent technology advancement enabling high color purity, large‐sized AMOLED, a lot of problems to solve still exist to enter the large‐sized display market. Here, Samsung will discuss how far the technologies need to go for the marketplace of large‐sized display.
This paper presents thermally adaptive driving (TAD) technology for response time compensation (RTC) of an LCD with an integrated sensor. The TAD is comprised of analog sensor signal conditioning and a digital feedback algorithm. The integrated thermal sensor provides accurate temperature measurement of the liquid crystal layer. The TAD controller has an 8-step look-up-table (LUT), and compensates response time based on the panel temperature. The TAD system reduces response time by nearly 50% over the temperature range 0℃ -60℃.
We have developed a 14.1 inch full color polymer LED display, based on an a-Si TFT backplane, using ink jet printing, which does not show visible swathe marks during display operation. To remove the swathe marks, we have developed the single path printing technology for the hole-conduction layer deposition to significantly reduce the complexity of interlacing printing across the panel, which is known as an alternative to remove the swathe marks. In addition, we have adopted the interlayer process to increase the lifetime of ink jet printed displays. These technologies will enable the scale-up of the ink jet printed AMOLED applications to larger size displays, such as desktop monitors and TVs.
Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) which utilize two layers of amorphous silicon nitride with different composition as a gate insulator have been studied. The field-effect mobility, subthreshold slope, and stability of an a-Si:H TFT are enhanced by inserting a thin silicon-rich nitride layer between the a-Si:H and the gate insulator. The improvement of these characteristics appears to be due to both the decrease of the interface state density between the a-Si:H and the top silicon-rich nitride layer, and the good dielectric quality of the bottom nitride layer.
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