The formation of thin-film tungsten silicide annealed in ultrahigh vacuum

Siegal, Michael P.; Santiago, J. J.

doi:10.1063/1.343587

Cited by 21 publications

(9 citation statements)

References 12 publications

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“…At 700-750°C, the Cu 3 Si and CuTi 3 began to form on the surface. The results show that when the deposited W-Ti thin films were solid solution phase structure, the temperature of new compounds that appeared was slightly higher than that of the film with pure Ti and pure W. At the same time the W-Ti/Si interfacial reaction increased and small amounts of Cu began to diffuse into the Si substrates [16]. The films had a serious failure at 750°C, and when the annealing temperature was increased, the W-Ti thin films completely failed for Cu atoms totally changed into Cu 3 Si and CuTi 3 .…”

Section: Failure Mechanismmentioning

confidence: 78%

Thermal stability of nanocrystalline W-Ti diffusion barrier thin films

Wang

Fan

2010

Sci. China Technol. Sci.

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Nanocrystalline W-Ti diffusion barrier thin films with different phase structures and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. These films were annealed at different temperatures for 1 h. The diffusion barrier properties and thermal stability were studied using four-probe tester (FPP), XRD, AFM, XPS, FESEM, and HRTEM. The experimental results showed that the films were stable up to 700°C. When the annealing temperature was increased, the Cu and Ti atoms began to react and CuTi3 was formed. In addition, the high resistance Cu3Si was formed due to inter-diffusion between the Si and Cu atoms which made the surface rougher and caused the sheet resistance to increase abruptly. At the same time, failure mechanism of the nanocrystalline W-Ti diffusion barrier thin films during annealing process was also discussed. nanocrystalline W-Ti thin films, diffusion barrier, anneal, sheet resistance Citation:Wang Q X, Fan Z K, Liang S H. Thermal stability of nanocrystalline W-Ti diffusion barrier thin films.

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Section: Failure Mechanismmentioning

confidence: 78%

Thermal stability of nanocrystalline W-Ti diffusion barrier thin films

Wang

Fan

2010

Sci. China Technol. Sci.

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“…Such voids can arise as a result of diffusion of Si atoms out of the Si substrate and into the W-Ti layer. Siegal et al have shown that in the case of annealed W-Ti/Si layers, Si moves into W, forming tungsten silicide [11,12]. The formation and evolution of the voids is described qualitatively in terms of mass transport of Si.…”

Section: Resultsmentioning

confidence: 99%

A Study of Tungsten-Titanium Barriers in Silver Metallization

2007

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This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 o C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 o C. Silicon started moving into the tungsten-titanium film at temperatures above 600 o C. Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 o C.

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“…Recently, it has also been used as structural material for MEMS devices such as pressure sensors (Fujimori et al 2007). WSi films have been prepared by many methods, for example, the reaction of a W thin film with Si at elevated temperatures (Siegal et al 1989), chemical vapor deposition (Pauleau et al 1989), deposition of W and Si by co-sputtering (Molarius et al 1991), or sputtering of WSi x (Washidzu et al 1991).…”

Section: Introductionmentioning

confidence: 99%

Measurement of mechanical and thermal properties of co-sputtered WSi thin film for MEMS applications

et al. 2010

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In this study, mechanical and thermal properties of the co-sputtered tungsten silicide (WSi) thin film were evaluated to consider the possibility of its use in MEMS applications. WSi film was prepared by cosputtering and basic micromachining processes, and its mechanical and thermal properties such as Young's modulus, temperature coefficient of resistance (TCR), strain gauge factor, coefficient of thermal expansion (CTE) and thermal stress were studied. The measurement method was simple and efficient since only one test pattern was used for all measurements. At room temperature, the TCR, gauge factor, CTE and thermal stress were measured to be -670 ppm/°C, 2.8, 32 ppm/°C and 1.76 GPa, respectively. The dependence of these coefficients on temperature was also evaluated experimentally.

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The formation of thin-film tungsten silicide annealed in ultrahigh vacuum

Cited by 21 publications

References 12 publications

Thermal stability of nanocrystalline W-Ti diffusion barrier thin films

Thermal stability of nanocrystalline W-Ti diffusion barrier thin films

A Study of Tungsten-Titanium Barriers in Silver Metallization

Measurement of mechanical and thermal properties of co-sputtered WSi thin film for MEMS applications

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