The formation of CdTe thin films by the stacked elemental layer method

Cruz, L. R.; Avillez, Roberto R. de

doi:10.1016/s0040-6090(00)01081-6

Cited by 17 publications

(9 citation statements)

References 10 publications

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“…The same kinds of results were observed on the surface of thin films prepared by ablation of a hot-pressed powder target ZnTe with Nd:YAG laser [24,25]. Also, a 20 % increase in the film thickness of the stack is expected after completion of the reaction due to the difference between the molar volumes of the ZnTe compound and the Te/Zn bilayers [26]. In order to understand the change in film thickness after annealing while using the SEL method, the cross sectional image of the stacks before and after annealing was recorded and presented in Fig.…”

Section: Morphological Studiessupporting

confidence: 60%

Optical Properties and Surface Morphology of Zinc Telluride Thin Films Prepared by Stacked Elemental Layer Method

Shanmugan

Devarajan

2012

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ZnTe thin films were prepared by Stacking of elemental (Zn and Te) layers (SEL) followed by inert gas annealing. The optical parameters were calculated from the transmission spectra. The bandgap of the annealed samples was found between 1.95 eV and 2.06 eV. The change in film thickness after annealing was observed using cross sectional SEM image of the annealed samples. The surface morphology of the annealed Te/Zn stack was also analyzed and observed as very smooth, compact and dense surface. The prepared film was Zn rich evidenced by EDAX. The observed result encourages in pursuing the SEL method for the preparation of compound semiconductor from II-VI group materials.

DOI: http://dx.doi.org/10.5755/j01.ms.18.2.1908

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Section: Morphological Studiessupporting

confidence: 60%

Optical Properties and Surface Morphology of Zinc Telluride Thin Films Prepared by Stacked Elemental Layer Method

Shanmugan

Devarajan

2012

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DOI: http://dx.doi.org/10.5755/j01.ms.18.2.1908

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“…X-ray diffraction pattern of vacuum annealed InSb bilayer thin film having thickness, 3000-1500 Å. values (from ASTM cards) of vacuum annealed In-Sb thin film with their planes are shown in table 3. Similar effect has been observed by Cruz and de Avillez (2000) in the case of CdTe, ZnSe (Singh and Vijay 2004) and InSb (Singh and Vijay 2005). Present observed results are in good agreement with XRD pattern observed by Masaaki et al (1991) for In-Sb with variation of substrate temperature.…”

Section: X-ray Diffraction Analysissupporting

confidence: 80%

“…sputtering (Milyazaki et al 1991), MBE (Chyi et al 1989), CVD (Chang and Bedair 1985), flash evaporation (Carroland and Spivak 1966) and vacuum evaporation (Asauskas et al 1980). The stack elemental layer deposition method has been used for CdTe by Cruz and de Avillez (2000), copper indium diselenide thin films by Carter et al (1987), ZnSe and InSb thin films by Singh and Vijay (2004) and AlSb thin films by Singh and Vijay (2005). It is particularly suitable for deposition of compound semiconductor thin films, as it provides good control of composition (Singh and Vijay 2004).…”

Section: Introductionmentioning

confidence: 99%

Study of annealing effects in In-Sb bilayer thin films

Mangal

Vijay

2007

Bull Mater Sci

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The thin films of In-Sb having different thicknesses of antimony keeping constant thickness of indium was deposited by thermal evaporation method on ITO coated conducting glass substrates at room temperature and a pressure of 10 -5 torr. The samples were annealed for 1 h at 433 K at a pressure of 10 -5 torr. The optical transmission spectra of as deposited and annealed films have been carried out at room temperature. The variation in optical band gap with thickness was also observed. Rutherford back scattering and X-ray diffraction analysis confirms mixing of bilayer system. The transverse I-V characteristic shows mixing effect after annealing at 433 K for 1 h. This study confirms mixing of bilayer structure of semiconductor thin films.

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“…The layers were deposited by thermal evaporation technique (PVD) using E306A vacuum system. Taking into consideration that the number of atoms in Te and Cd layers must be identical, the relation between the thicknesses of elemental layers is specified as Te/Cd = 1.53 [12]. Spec-pure Cd (99.999 %) and Te (99.9999 %) were evaporated in three different sequences using glass substrates at room temperature.…”

Section: Methodsmentioning

confidence: 99%

Effect of Layer Sequence on Formation of CdTe Thin Film Prepared by Stacked Elemental Layers

2008

Egyptian Journal of Solids

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Three different sequences of Cd and Te were stacked to prepare polycrystalline CdTe thin films by the effect of annealing. X-ray diffraction analysis was used to characterize the prepared films. Although under some preparation conditions annealed films exhibit traces of Tellurium oxides, films of single polycrystalline CdTe phase have been successfully obtained even with annealing in air as an easy and simple manner. The best condition was sequence of glass/Te/Cd/Te and annealing at 200 o C for 30 minutes. The grain size was determined by line profile analysis using WinFit computer program and Fourier analysis. It was proved that film with grains in the nanoscale region can be fabricated using this technique. It was found that the average crystallite size ≈ 9.4 nm and the cumulative size distribution showed that there are no grains larger than 30 nm. Transmission and reflection for thin film contain only CdTe were measured in the wavelength range 300-2500 nm. Optical energy gap was extracted from the manipulation of transmission and reflection data. The values of energy gaps (1.5-1.65 eV) verify that, the films under consideration are a polycrystalline CdTe films.

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The formation of CdTe thin films by the stacked elemental layer method

Cited by 17 publications

References 10 publications

Optical Properties and Surface Morphology of Zinc Telluride Thin Films Prepared by Stacked Elemental Layer Method

Optical Properties and Surface Morphology of Zinc Telluride Thin Films Prepared by Stacked Elemental Layer Method

Study of annealing effects in In-Sb bilayer thin films

Effect of Layer Sequence on Formation of CdTe Thin Film Prepared by Stacked Elemental Layers

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