2012
DOI: 10.5755/j01.ms.18.2.1908
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Optical Properties and Surface Morphology of Zinc Telluride Thin Films Prepared by Stacked Elemental Layer Method

Abstract: ZnTe thin films were prepared by Stacking of elemental (Zn and Te) layers (SEL) followed by inert gas annealing. The optical parameters were calculated from the transmission spectra. The bandgap of the annealed samples was found between 1.95 eV and 2.06 eV. The change in film thickness after annealing was observed using cross sectional SEM image of the annealed samples. The surface morphology of the annealed Te/Zn stack was also analyzed and observed as very smooth, compact and dense surface. The prepared film… Show more

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Cited by 3 publications
(5 citation statements)
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“…This shows that the bandgap energy decreased from 3.20 eV (as deposited) to 2.60 eV on annealing. This agrees well with the reports of [21,22]. However, the band gap energies are higher than the theoretical value of 2.26 eV.…”
Section: A3 the Morphological Propertysupporting
confidence: 92%
“…This shows that the bandgap energy decreased from 3.20 eV (as deposited) to 2.60 eV on annealing. This agrees well with the reports of [21,22]. However, the band gap energies are higher than the theoretical value of 2.26 eV.…”
Section: A3 the Morphological Propertysupporting
confidence: 92%
“…Due to characteristics obtained at the time of the deposition process such as: low resistivity, high transparency in the visible spectrum, etc. [ 1 , 2 , 3 , 4 ], thin layers of zinc telluride (ZnTe) are used in various modern technologies, which are implemented in various micro- and nano-structured devices, such as light emitting diodes, solar cells, photodetectors, etc. [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ].…”
Section: Introductionmentioning
confidence: 99%
“…[ 1 , 2 , 3 , 4 ], thin layers of zinc telluride (ZnTe) are used in various modern technologies, which are implemented in various micro- and nano-structured devices, such as light emitting diodes, solar cells, photodetectors, etc. [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ]. Although it is a popular material, there are few publications and studies regarding its material engineering.…”
Section: Introductionmentioning
confidence: 99%
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“…The open circuit voltage, under "one-sun" illumination for CuPc-based devices, was obtained in the range of 450 mV to 1.2 V by varying thickness of the active layer (Rajaputra et al, 2007), device structure and top electrodes (Tang, 1986;Yakimov and Forrest, 2002). The active layers of CuPc for OSCs are mostly grown by vacuum evaporation technique, which is an expensive and time-consuming process, but the thin films grown by this technique show better results in terms of efficiency, film thickness uniformity and morphology (Aziz et al, 2011;Shanmugan and Mutharasu, 2012). However, further improvements are required through simple and cost-effective solution processing techniques to meet the requirements of cheap and environment-friendly technology.…”
Section: Introductionmentioning
confidence: 99%