The first single source deposition of tin sulfide coatings on glass: aerosol-assisted chemical vapour deposition using [Sn(SCH2CH2S)2]

Atomic Layer Deposition of Tin Monosulfide Thin Films

“…Figure 7 shows TEM micrograph and selected area electron diffraction (SAED) of a 25 nm-thick SnS film deposited at 120 o C. These results show that ALD SnS films do not contain significant amounts of amorphous phase despite being deposited at relatively low temperature. The utilization of a Sn(II) precursor rather than a Sn(IV) precursor [6,26,29,30] broadens the narrow substrate temperature window reported previously and provides only pure SnS over a wider range of temperature.…”

“…Optical properties were measured only on a very thin film (23 nm) and crystal structure and electrical properties of the film were not studied. [6,26,29,30] mitigates possible contamination by Sn 2 S 3 and SnS 2 phases. Moreover, the deposition temperature is relatively low, thus overcoming the problem of sulfur-deficiency due to sulfur re-evaporation.…”

“…Sn, Sn 2 S 3 , and SnS 2 ) have often been co-deposited into the films as reported by several authors. [2,16,27,29] To prevent the formation of Sn 2 S 3 and SnS 2 phases, relatively high deposition temperatures are needed in thermal evaporation (above 275 o C) [17] and CVD (above 500 o C) [26,30] . Although pure SnS phase can be obtained at certain substrate temperatures or growth conditions, the chemical composition of the films usually deviates from ideal stoichiometric SnS by as much as 10-20%.…”

Tribenzyltin(IV)chloride Thiosemicarbazones: Novel Single Source Precursors for Growth of SnS Thin Films

“…[12,13] Methods such as electroless deposition, [14] spray-pyrolysis, [15] low pressure [16] and plasma-assisted [17] CVD, chemical bath deposition, [18] vapor transport methods, [19] melt growth, [20] 4 ], where M is a Group IV element. [23] Thermogravimetric analysis and mass spectrometry data showed that [Sn(SR) 4 ] results in RS-SR in the gas phase, supporting the formation of disulfide during the CVD process. [23] However, in the presence of a minimal flow of H 2 S it was possible to deposit SnS films.…”

Decomposição térmica de complexos de Zn e Cd com isomaleonitriladitiolato (imnt)

“…Esta investigação mostra-se importante, uma vez que os mecanismos de decomposição de precursores variam. Por ex., na obtenção de filmes por deposição química de vapor Parkin et al 17 objetivando obter SnS partiram de dois precursores diferentes, sendo eles Sn(SR 4 ) (onde R = radical orgânico), um tiolato monodentado, e Sn(S-CH 2 -CH 2 -S) 2 , um ditiolato quelato. No primeiro caso houve necessidade de se efetuar a deposição na presença de um fluxo de H 2 S para garantir a formação do sulfeto e evitar que o estanho metálico, que se forma inicialmente na superfície, conduza à formação de óxido de estanho na presença de oxigênio.…”