The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential

Laska, T.; Münzer, M.; Pfirsch, F.; Schaeffer, Christian; Schmidt, Thomas Mikael

doi:10.1109/ispsd.2000.856842

Cited by 235 publications

(78 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…2) It will be easy to apply the method to devices with similar structures, such as those presented in latest IGBT generations, like field stop [20] and CSTBT [21]), or thyristor-type devices like IGCT [22].…”

Section: Discussionmentioning

confidence: 99%

A FEM punch-through IGBT model using an efficient parameter extraction method

Chibante

Araújo

Carvalho

2005

31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005.

View full text Add to dashboard Cite

-A Finite Element physics-based punch-throughIGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results.

show abstract

Section: Discussionmentioning

confidence: 99%

A FEM punch-through IGBT model using an efficient parameter extraction method

Chibante

Araújo

Carvalho

2005

31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005.

View full text Add to dashboard Cite

show abstract

“…This concept is applied to IGBTs in the 600V-6.5kV range, and has been possible by new processes on ultrathin silicon wafers for low voltage IGBTs [39,40]. The combination of a thin n-base with a low-doped field stop (FS) layer results in a drastic reduction of the overall losses [41]. The FS concept is based on using an n-layer with increased doping in front of the panode, and accounts for a trapezoidal electric field distribution in the off-state instead of the triangular one of the NPT structure.…”

Section: Igbtsmentioning

confidence: 99%

A Review of Si MOS-gated Power Switches and PiN Rectifiers

et al. 2012

View full text Add to dashboard Cite

Original scientific paperRevolutionary advances and developments have been made in power semiconductor device technologies during the last decades which have allowed the improvement of power electronic systems in terms of their efficiency and reliability. The advent of MOS-gated power switches such as the power MOSFET and the IGBT showing high input impedance has been a real breakthrough in the design and fabrication of power electronic systems. This paper reviews the recent progress in the development of Si MOS-gated power devices and rectifiers. The evolution of these devices' technologies together with the introduction of revolutionary device concepts is also discussed. Concretely, the introduction of trench technologies for power MOSFETs and the use of the super-junction concept for breaking the 1D-silicon limit are highlighted. Developments in IGBTs such as those based on the use of thin wafers and strategies for optimising the plasma distribution in PT IGBTs during the on-state are also addressed. Finally, advances in PiN diode technologies including new concepts for both the anode and the cathode structures are also reviewed. These approaches have allowed the reduction of the PiN total losses and a soft reverse recovery behaviour, leading to a more rugged device.Key words: MOS-gated power devices, power MOSFETs, CoolMOS, super-junction devices, IGBTs, PiN rectifiers Prikaz stanja silicijevih MOS upravljanih učinskih sklopova i PiN ispravljača. U posljednjim desetljećima svjedočimo razvoju sustava učinske elektronike u pogledu povećanja efikasnosti i pouzdanosti. Napredak je omogućen zahvaljujući izvanrednom napredku koji je postignut na području učinskih poluvodiča. Pojava MOS upravljanih učinskih sklopova s visokom ulaznom impedancijom, kao što su MOSFET i IGBT, rezultirao je probojem u projektiranju i proizvodnji sustava učinske elekronike. Ovajčlanak daje uvid u napredak koji je u posljednje vrijeme ostvaren u razvoju silicijeve MOS upravljane učinske elektronike i ispravljača. Uz dosadašnji razvoj tehnologije navedenih komponenata, učlanku je uključen i osvrt na revolucionarne koncepte budućeg razvoja. Konkretno, u radu su objašnjene tehnologija rova za MOSFET i korištenje koncepta super spoja za probijanje granice jednodimenzionalnog silicija. Razmatrana su i poboljšanja IGBT-ova koja se baziraju na uporabi tankih pločica a strategijama optimiranja distribucije plazme u PT IGBT-ovima za vrijeme aktivnog stanja. Konačno, prikazan je i napredak u tehnologiji PiN dioda koji uključuje nove strukturalne koncepte katode i anode. Ovi pristupi su omogućili smanjenje ukupnih gubitaka PiN diode i blagu dinamiku reverznog oporavka, što rezultira povećanjem robusnosti sklopa.

show abstract

“…As shown in Figure 4, the generation of device proceeds only at the moment when the fundamental tradeoff relationship between V on and E off shifts to the closer position from the origin of the graph. In our case, the generation of IGBT proceeds from the planar gate designed by a 3 micro-meter rule to the planar gate of the sub-micron design rule [2], further to the trench gate type [3,9] and CSTBT TM [4,5,7,8], to today's current generation of 600 V class known as the 7th IGBT [6,13] as the LPT type device, LPT type devices are explained in detail in a later part of this paper.…”

Section: Introductionmentioning

confidence: 99%

Future trend of Si power device

Minato

Sato

2014

IEICE Electron. Express

View full text Add to dashboard Cite

As a FOM (Figure Of Merit), the power density of a power module has grown in an almost constant ratio for the past 20 years in the field of power electronics. This progress has been achieved by the joint development of power chips and a package. A combination of an IGBT (Insulated Gate Bipolor Transistor) and an FWD (Free Wheeling Diode) is the most frequent combination of power chips for a power module. The progress of both IGBT and diode is based not only upon the development of device structures but also upon the progress of the wafer process technology, which is derived from a LSI (Large Scale Integrated circuit) process and optimised for the power device. The package technology for power devices is uniquely developed for high reliability even for high power density application. This paper reports both the power chip and the package technologies up to the latest generation for the IGBT power module.

show abstract

The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential

Cited by 235 publications

References 3 publications

A FEM punch-through IGBT model using an efficient parameter extraction method

A FEM punch-through IGBT model using an efficient parameter extraction method

A Review of Si MOS-gated Power Switches and PiN Rectifiers

Future trend of Si power device

Contact Info

Product

Resources

About