The failure of aged CuAu thin films by Kirkendall porosity

Feinstein, L.G.; Bindell, J. B.

doi:10.1016/0040-6090(79)90379-1

Cited by 24 publications

(4 citation statements)

References 11 publications

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“…[53,54] As a result of the development of Kirkendall voids, both the contact surface area and the bond strength decrease. [55] 3.2.7 Effect of Silicon Content in the Alloy. To examine the influence of silicon content in the Al-Si alloy, XES plates were aluminized by dip-coating as before but instead of an A-S7G03 alloy, synthetic A-S3 (3 wt.% Si) and A-S17 (17 wt.% Si) alloys were used.…”

Section: /T (T In K)mentioning

confidence: 99%

Chemical Changes at the Interface Between Low Carbon Steel and an Al-Si Alloy During Solution Heat Treatment

Zhe

Dezellus

Gardiola

et al. 2011

J. Phase Equilib. Diffus.

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The aim of this work was to characterize the chemical changes during solid state solution heat treatment of a metallurgically bonded steel/Al-Si interface. For this purpose, low carbon steel plates covered with the A-S7G03 aluminium alloy (7 wt.% Si, 0.3 wt.% Mg analogous to A356) were prepared by dip coating, water-quenching to room temperature and reheating in the solid state at 480-560°C for 3-160 h. Upon reheating at 535°C, a reaction layer was observed to grow at the interface between steel and the iron-saturated Al-Si alloy. As long as an intimate contact could be maintained, the total thickness, x, of the reaction layer increased with time, t, according to a nearly parabolic growth law x 2 = KAEt 2 b. At 535°C, the value of the growth constant was K = 4.045310 214 m 2 s 21 . This constant was found to be thermally activated [K = K 0 exp(2Q/ RT)] with K 0 = 4.37310 24 m 2 s 21 and Q = 153 kJ mol 21 . The whole chemical interaction process was controlled by solid state volume diffusion and the reaction layer sequence corresponded to a diffusion path in the Al-Fe-Si phase diagram. A striking feature of the reaction process is the unbalanced diffusion of aluminium atoms through the reaction zone which rapidly results in the formation of Kirkendall voids. As these voids coalesce, solid state diffusion becomes more and more difficult and the steel/alloy bond gets weakened. Oxidation appears to be an aggravating factor, where applicable.

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Section: /T (T In K)mentioning

confidence: 99%

Chemical Changes at the Interface Between Low Carbon Steel and an Al-Si Alloy During Solution Heat Treatment

Zhe

Dezellus

Gardiola

et al. 2011

J. Phase Equilib. Diffus.

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“…Since the EDX is not so accurate at this small region, we can deduce the phase of A is AuCu compound and AuCu 3 for B from the reference [15]. These compounds are easy to form Kirkendall void at the high temperature, which would decrease the strength and reliability [16]. Fig.9 shows the interface of the Au ball bump on the Si/Ti-Cu-Ag, there was no compound layer between the layers, and the interfaces were still very tight and clear.…”

Section: The Bondability Of the Ag Metallizationmentioning

confidence: 99%

Characterization of ag nanofilm metallization on copper chip interconnect and its ultrasonic bondability

Tian

Zhao

Wang

2009

2009 International Conference on Electronic Packaging Technology &Amp; High Density Packaging

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To improve the bondability of copper chip interconnect, a Si/Ti-Cu-Ag structure was designed and fabricated using evaporation method. Some analytical methods such as SEM, AFM, XRD and XPS were used to characterize the Ag nanofilm metallization and its bondability. It was found that the evaporated Ag metallization has good surface state and samll particle size, which could diffuses readily in the wire bonding process and thus improve the bondablilty. XPS showed the Ag metallization was pure silver without oxidation and sulfuration when stored at the room temperature. And XRD showed the crystal face index of the top surface polycrystalline Ag layer was (111), which agree with the principle of minimum surface energy. The bondability and shear strength of the Au ball bump on the Si/Ti-Cu-Ag structure were excellent at room temperature and 150°C, better than the oxygen free copper, and meet the JEDEC Standard 22-B116. After high temperature storage at 200°C for 16 days and temperature cycling for 1000 cycles, the interfaces of the Si/Ti-Cu-Ag structure were still very tight and clear, showing high reliability.

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“…[1,2] It is a critical factor in hybrid microcircuits where the diffusion of copper from leads during processing and service can degrade performance and reliability to unacceptable levels. [3][4][5] Close examination of microcircuits subjected to accelerated aging show significant levels of copper migration from the copper-cored-leads to the gold-conductive-pads. The gold pads become an essentially uniform solid solution of gold-2w/o-copper while copper concentrations along the lead-pad bond often exceed 20 w/o.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Copper on the Interfacial Failure of Gold Films

et al. 2001

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Nanoindentation test techniques were combined with deposition of highly stressed overlayers to study the interfacial fracture susceptibility of gold-on-copper and gold-2w/o-copper alloy films. The gold-on-copper film blistered readily following deposition of stressed tungsten overlayers. Additional stress from nanoindentation was required to trigger delamination and blister formation in the gold-copper alloy film. Fracture energies were then determined using mechanics-based models. The results show that the gold-copper alloy exhibited higher fracture energies than the gold-on-copper films. This increase scaled with film strength suggesting that the higher measured fracture energies in the gold-copper alloy film were due to solid solution hardening.

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The failure of aged CuAu thin films by Kirkendall porosity

Cited by 24 publications

References 11 publications

Chemical Changes at the Interface Between Low Carbon Steel and an Al-Si Alloy During Solution Heat Treatment

Chemical Changes at the Interface Between Low Carbon Steel and an Al-Si Alloy During Solution Heat Treatment

Characterization of ag nanofilm metallization on copper chip interconnect and its ultrasonic bondability

The Effects of Copper on the Interfacial Failure of Gold Films

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