The fabrication technology of VCSELs emitting in the 1.55 μm waveband

Voropaev, K. O.; Seleznev, B.V.; Prokhorov, A.; Ionov, A. S.; Blokhin, S. A.

doi:10.1088/1742-6596/1658/1/012069

Cited by 7 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…1) и формируется следующим образом: плазмохимическим травлением в индуктивно-связанной плазме формируется первая меза в верхнем AlGaAs/GaAs РБО для вскрытия верхнего ВРК-слоя, химическим травлением формируется вторая меза в оптическом резонаторе InAlGaAs/InP для вскрытия нижнего ВРК-слоя, химическим травлением формируется третья меза в нижнем ВРК-слое для снижения ёмкости контактных площадок, плазмохимическим осаждением из газовой фазы формируется слой диэлектрика SiN для электрической изоляции, плазмохимическим травлением диэлектрика SiN формируются окна к контактным слоям, методом взрывной литографии формируются контакты и контактные площадки Ti/Pt/Au. Особенности изготовления данного типа лазеров приведены в работе [23].…”

Section: экспериментальные образцыunclassified

Высокоскоростные Одномодовые Вертикально-Излучающие Лазеры Спектрального Диапазона 1550 Нм

Блохин¹,

Бабичев²,

Карачинский³

et al. 2022

Физика И Техника Полупроводников

View full text Add to dashboard Cite

The results of complex studies of static and dynamic performance of 1550 nm-range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distributed reflector wafers grown by molecular beam epitaxy, are presented. The VCSELs with a buried tunnel junction diameter less than 7 μm demonstrated a single-mode lasing with a side-mode suppression ratio more than 40 dB; however, at diameters less than 5 μm, a sharp increase in the threshold current is observed. It is associated to the appearance of a saturable absorber due to penetration of optical mode into the non-pumped regions of the active region. The maximum single-mode output optical power and the–3 dB modulation bandwidth reached 4.5 mW and 8 GHz, respectively, at 20°C. The maximum data rate at 20ºC under non-return-to-zero on-off keying modulation was 23 Gb/s for a short-reach link based on single-mode fiber SMF-28. As the length of the optical link increased up to 2000 m, the maximum data rate dropped to 18 Gbit/s. The main factors affecting the high-speed operation and data transmission range are defined and discussed, and the further ways to overcome themit are proposed.

show abstract

Section: экспериментальные образцыunclassified

Высокоскоростные Одномодовые Вертикально-Излучающие Лазеры Спектрального Диапазона 1550 Нм

Блохин¹,

Бабичев²,

Карачинский³

et al. 2022

Физика И Техника Полупроводников

View full text Add to dashboard Cite

show abstract

“…The contacts and the contact pads Ti/Pt/Au are formed by the lift-off method. The special features for manufacturing of the lasers of this type are given in the study [23].…”

Section: Experimental Samplesmentioning

confidence: 99%

1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

et al. 2022

View full text Add to dashboard Cite

The results of complex studies of static and dynamic performance of 1550 nm-range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distributed Bragg reflector wafers grown by molecular beam epitaxy, are presented. The VCSELs with a buried tunnel junction diameter less than 7 μm demonstrated a single-mode lasing with a side-mode suppression ratio more than 40 dB; however, at diameters less than 5 μm, a sharp increase in the threshold current is observed. It is associated to the appearance of a saturable absorber due to penetration of optical mode into the non-pumped regions of the active region. The maximum single-mode output optical power and the -3 dB modulation bandwidth reached 4.5 mW and 8 GHz, respectively, at 20oC. The maximum data rate at 20oC under non-return-to-zero on-off keying modulation was 23 Gb/s for a short-reach link based on single-mode fiber SMF-28. As the length of the optical link increased up to 2000 m, the maximum data rate dropped to 18 Gbit/s. The main factors affecting the high-speed operation and data transmission range are defined and discussed, and the further ways to overcome themit are proposed. Keywords: VCSEL, wafer fusion, molecular beam epitaxy, single-mode operation, high-speed performance.

show abstract

“…Therefore, the studied VCSEL designs differed only in the n ++ -InGaAs layer thickness, while the thicknesses of p ++ -InGaAs and p ++ -InAlGaAs layers remained fixed. The design of lasers and the specifics of their fabrication were discussed in detail in [10,12,13].…”

mentioning

confidence: 99%

Impact of transverse optical confinment on performance of 1.55 μm vertical-cavity surface-emitting lasers with a buried tunnel junction

S.A.

Bobrov

A.A.

et al. 2022

Technical Physics Letters

View full text Add to dashboard Cite

The impact of transverse optical confinement on the static and spectral characteristics of 1.55 μm vertical-cavity surface-emitting lasers (WF-VCSEL) with a buried tunnel junction (BTJ) n++-InGaAs/p++-InGaAs/p++-InAlGaAs, implemented using molecular-beam epitaxy and wafer fusion. It was found that for VCSELs with a tunnel junction (TJ) etching depth of 15 nm, the single-mode lasing occurs up to 8 μm BTJ mesa size due to a relatively weak lateral optical confinement, while the effect of a saturable absorber (SA) appears when the BTJ mesa size is less than 7 μm. Enhancing lateral optical confinement by increasing the BTJ etching depth up to 20 nm leads to suppression of the SA effect at the BTJ mesa size of 5-6 μm, but simultaneously limits the maximum single-mode optical power. According to obtained results an increase in the spectral mismatch between the maximum of the gain spectrum of the active region and the resonance wavelength of the WF-VCSEL up to ~ 35-50 nm will make it possible to suppress the undesirable SA effect in a wide range of the BTJ mesa sizes maintaining the single-mode lasing. Keywords: vertical-cavity surface-emitting laser, wafer fusion, molecular beam epitaxy, single-mode operation, saturable absorber.

show abstract

The fabrication technology of VCSELs emitting in the 1.55 μm waveband

Cited by 7 publications

References 5 publications

Высокоскоростные Одномодовые Вертикально-Излучающие Лазеры Спектрального Диапазона 1550 Нм

Высокоскоростные Одномодовые Вертикально-Излучающие Лазеры Спектрального Диапазона 1550 Нм

1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

Impact of transverse optical confinment on performance of 1.55 μm vertical-cavity surface-emitting lasers with a buried tunnel junction

Contact Info

Product

Resources

About