Abstract:The results of complex studies of static and dynamic performance of 1550 nm-range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distributed reflector wafers grown by molecular beam epitaxy, are presented. The VCSELs with a buried tunnel junction diameter less than 7 μm demonstrated a single-mode lasing with a side-mode suppression ratio more than 40 dB; however, at diameters less than 5 μm, a sharp increase in the threshold current is … Show more
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