The fabrication of InGaP/Si light emitting diode by metalorganic chemical vapor deposition

Hu, Canbin; Sheu, Chai-Yuan; Lee, M.K.

doi:10.1016/s0254-0584(97)80070-3

Cited by 2 publications

(3 citation statements)

References 11 publications

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“…SEM images of the GaInP nanofibers formed on n-Si substrates at different process times (10,20, and 25 minutes) are given in Fig. 3a-c, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Electronic, optical, electrical, and mechanical properties of such fibers can be easily modified [5,6]. Thus, nanofibers fabricated by electrospinning technique, have attracted considerable interest, to be used in many important applications, such as various sensors, solar cells, and photocatalytic devices [5][6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…Because of this, they exhibit some merits due to the defect centers, which cause a decrease of the conductivity [10,14,15]. GaInP/Si junctions are good candidates for tunneling junctions in multijunction cells and LEDs [10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates

et al. 2017

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GaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the currentvoltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I − V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties.

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“…SEM images of the GaInP nanofibers formed on n-Si substrates at different process times (10,20, and 25 minutes) are given in Fig. 3a-c, respectively.…”

Section: Resultsmentioning

confidence: 99%