The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films

Noé, Pierre; Okuno, Hanako; Jager, Jean‐Baptiste; Delamadeleine, E.; Demichel, Olivier; Rouvière, J. L.; Calvo, V.; Maurizio, C.; d’Acapito, Francesco

doi:10.1088/0957-4484/20/35/355704

Cited by 7 publications

(3 citation statements)

References 28 publications

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“…5͑b͔͒͒. 37,38 To shed more light on the presence of Er 3+ transitions in the visible range, we have subtracted the spectra of Fig. 35 One expects some agglomeration of Er ions after annealing at 1100°C, 36 leading to detrimental effects such as up-conversion and crossrelaxation phenomena.…”

Section: B Influence Of the Annealing Temperaturementioning

confidence: 99%

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Cueff

Labbé

Dierre

et al. 2010

Journal of Applied Physics

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Electroluminescence from Er-doped Si-rich silicon nitride light emitting diodes Appl. Phys. Lett. 97, 081109 (2010); 10.1063/1.3483771Resonant structures based on amorphous silicon suboxide doped with Er 3 + with silicon nanoclusters for an efficient emission at 1550 nm Current transport and electroluminescence mechanisms in thin SiO 2 films containing Si nanocluster-sensitized erbium ionsThis study reports on the investigation and characterization of the different emitting centers within SiO 2 codoped by Er 3+ ions and silicon-excess. Erbium doped silicon-rich silicon oxide ͑SRSO:Er͒ thin films, fabricated by magnetron cosputtering at 500°C, were analyzed by means of cathodoluminescence. The CL spectra of SRSO, Er-doped SiO 2 and SRSO:Er were recorded and compared for various annealing temperatures. It was found that some specific optically-active point-defects called silicon-oxygen-deficient centers ͑SiODCs͒ are present in all kinds of samples. In the layers containing some excess Si, the phase separation between Si nanoclusters ͑Si-ncs͒ and SiO 2 is observed when the annealing temperature reaches and exceeds 900°C. The formation of Si-nc increases with annealing at the expense of SiODCs that was assumed to act as seeds for the growth of Si-nc. For SRSO:Er samples, the contribution of SiODCs overlaps that due to Er 3+ transitions in the visible range. The emissions from SiODCs are drastically reduced when an SRSO sample is doped with Er ions, whereas the Er emissions in the visible range start to be distinctly observed. We propose a scenario of energy transfer from SiODCs toward the Er ions, especially as the emissions from the Si-based entities ͑SiODCs, Si-nc͒ and from some transitions of Er ions are located in a same visible broad range.

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Section: B Influence Of the Annealing Temperaturementioning

confidence: 99%

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Cueff

Labbé

Dierre

et al. 2010

Journal of Applied Physics

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“…Nevertheless, other indirect techniques, such as fluorescence-extended X-ray absorption fine-structure spectroscopy [14-16] or X-ray photoelectron spectroscopy [17], have evidenced that the amount of Er clusters in Er-doped Si-rich SiO 2 films depends strongly on the preparation conditions or annealing temperature. We have recently demonstrated the feasibility of atom probe tomography (APT) analysis of Si-rich SiO 2 systems, giving its atomic insight [18,19].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica

et al. 2013

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Photoluminescence spectroscopy and atom probe tomography were used to explore the optical activity and microstructure of Er3+-doped Si-rich SiO2 thin films fabricated by radio-frequency magnetron sputtering. The effect of post-fabrication annealing treatment on the properties of the films was investigated. The evolution of the nanoscale structure upon an annealing treatment was found to control the interrelation between the radiative recombination of the carriers via Si clusters and via 4f shell transitions in Er3+ ions. The most efficient 1.53-μm Er3+ photoluminescence was observed from the films submitted to low-temperature treatment ranging from 600°C to 900°C. An annealing treatment at 1,100°C, used often to form Si nanocrystallites, favors an intense emission in visible spectral range with the maximum peak at about 740 nm. Along with this, a drastic decrease of 1.53-μm Er3+ photoluminescence emission was detected. The atom probe results demonstrated that the clustering of Er3+ ions upon such high-temperature annealing treatment was the main reason. The diffusion parameters of Si and Er3+ ions as well as a chemical composition of different clusters were also obtained. The films annealed at 1,100°C contain pure spherical Si nanocrystallites, ErSi3O6 clusters, and free Er3+ ions embedded in SiO2 host. The mean size and the density of Si nanocrystallites were found to be 1.3± 0.3 nm and (3.1± 0.2)×1018 Si nanocrystallites·cm−3, respectively. The density of ErSi3O6 clusters was estimated to be (2.0± 0.2)×1018 clusters·cm−3, keeping about 30% of the total Er3+ amount. These Er-rich clusters had a mean radius of about 1.5 nm and demonstrated preferable formation in the vicinity of Si nanocrystallites.

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“…At this point it is important to mention that even at this high temperatures the absorption spectra of the films does not change significantly, indicating that the absorption due to the Si NPs has not changed. The decrease of PL intensity upon high temperature annealing (t750ºC) has been reported recently for Er-doped silicon rich-oxide samples, and was attributed to changes of the local order around Er atoms from a low to a high O coordination in the first shell (12). At this time is not possible to study the local order changes of Er 3+ in the Al 2 O 3 .…”

Section: Defect and Excited Er 3+ Ions Densities Evolution Upon Therm...mentioning

confidence: 90%

(Invited) Nanostructuring the Er³⁺ and Si Nanoparticle Distributions to Enhance the 1.5 μm Emission in Codoped Al₂O₃ Thin Films

Serna¹,

Núñez-Sánchez²,

Roque³

2010

ECS Trans.

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Nanostructured amorphous aluminum oxide (Al 2 O 3 ) thin films codoped with Erbium ions (Er 3+ ) and Si nanoparticles (Si NPs) are prepared by pulsed laser deposition. The doping structure can be controlled in such a way that Er 3+ and Si NP concentrations are optimized independently, the Si NP sizes are selected and the Er 3+ and Si NPs distances are varied to achieve a close contact below the nanometer scale. The optimized as-grown films show an enhanced photoluminescence performance at 1.5 ȝm which is related to an efficient Si NPs to Er 3+ energy transfer. Upon low temperature thermal annealing it is found a further enhancement of the photoluminescence intensity which is due both to a decrease of the number of non-radiative defects in the film and to an increase the fraction of excitable Er 3+ ions through Si NPs. The origin of the loss of the Si NPs-Er energy transfer upon high temperature annealing (t750ºC) is discussed.

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The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films

Cited by 7 publications

References 28 publications

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica

(Invited) Nanostructuring the Er³⁺ and Si Nanoparticle Distributions to Enhance the 1.5 μm Emission in Codoped Al₂O₃ Thin Films

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The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films

Cited by 7 publications

References 28 publications

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica

(Invited) Nanostructuring the Er3+ and Si Nanoparticle Distributions to Enhance the 1.5 μm Emission in Codoped Al2O3 Thin Films

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(Invited) Nanostructuring the Er³⁺ and Si Nanoparticle Distributions to Enhance the 1.5 μm Emission in Codoped Al₂O₃ Thin Films