Poly­(3,4-ethylenedioxythiophene) (PEDOT) is certainly the most known and most used conductive polymer because it is commercially available and shows great potential for organic electronic, photovoltaic, and thermoelectric applications. Studies dedicated to PEDOT films have led to high conductivity enhancements. However, an exhaustive understanding of the mechanisms governing such enhancement is still lacking, hindered by the semicrystalline nature of the material itself. In this article, we report the development of highly conductive PEDOT films by controlling the crystallization of the PEDOT chains and by a subsequent dopant engineering approach using iron­(III) trifluoromethanesulfonate as oxidant, N-methyl pyrrolidone as polymerization rate controller and sulfuric acid as dopant. XRD, HRTEM, Synchrotron GIWAXS analyses and conductivity measurements down to 3 K allowed us to unravel the organization, doping, and transport mechanism of these highly conductive PEDOT materials. N-methyl pyrrolidone promotes bigger crystallites and structure enhancement during polymerization, whereas sulfuric acid treatment allows the replacement of triflate anions by hydrogenosulfate and increases the charge carrier concentration. We finally propose a charge transport model that fully corroborates our experimental observations. These polymers exhibit conductivities up to 5400 S cm–1 and thus show great promise for room temperature thermoelectric applications or ITO alternative for transparent electrodes.

Controlled substitutional doping of two-dimensional transition-metal dichalcogenides (TMDs) is of fundamental importance for their applications in electronics and optoelectronics. However, achieving p-type conductivity in MoS2 and WS2 is challenging because of their natural tendency to form n-type vacancy defects. Here, we report versatile growth of p-type monolayer WS2 by liquid-phase mixing of a host tungsten source and niobium dopant. We show that crystallites of WS2 with different concentrations of substitutionally doped Nb up to 1014 cm–2 can be grown by reacting solution-deposited precursor film with sulfur vapor at 850 °C, reflecting the good miscibility of the precursors in the liquid phase. Atomic-resolution characterization with aberration-corrected scanning transmission electron microscopy reveals that the Nb concentration along the outer edge region of the flakes increases consistently with the molar concentration of Nb in the precursor solution. We further demonstrate that ambipolar field-effect transistors can be fabricated based on Nb-doped monolayer WS2.

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Single and few layers of the two-dimensional (2D) semimetal ZrTe are grown by molecular beam epitaxy on InAs(111)/Si(111) substrates. Excellent rotational commensurability, van der Waals gap at the interface and moiré pattern are observed indicating good registry between the ZrTe epilayer and the substrate through weak van der Waals forces. The electronic band structure imaged by angle resolved photoelectron spectroscopy shows that valence and conduction bands cross at the Fermi level exhibiting abrupt linear dispersions. The latter indicates massless Dirac Fermions which are maintained down to the 2D limit suggesting that single-layer ZrTe could be considered as the electronic analogue of graphene.

Graphene is the first engineering electronic material, which is purely two-dimensional: it consists of two exposed sp2-hybridized carbon surfaces and has no bulk. Therefore, surface effects such as contamination by adsorbed polymer residues have a critical influence on its electrical properties and can drastically hamper its widespread use in devices fabrication. These contaminants, originating from mandatory technological processes of graphene synthesis and transfer, also impact fundamental studies of the electronic and structural properties at the atomic scale. Therefore, graphene-based technology and research requires “soft” and selective surface cleaning techniques dedicated to limit or to suppress this surface contamination. Here, we show that a high-density H2 and H2-N2 plasmas can be used to selectively remove polymeric residues from monolayer graphene without any damage on the graphene surface. The efficiency of this dry-cleaning process is evidenced unambiguously by a set of spectroscopic and microscopic methods, providing unprecedented insights on the cleaning mechanisms and highlighting the role of specific poly-methyl-methacrylate residues at the graphene interface. The plasma is shown to perform much better cleaning than solvents and has the advantage to be an industrially mature technology adapted to large area substrates. The process is transferable to other kinds of two-dimensional material and heterostructures.

Understanding how ultrasmall gold nanoparticles (metal core ∼1–1.5 nm), so-called gold nanoclusters (Au NCs), interact with biological barriers has become highly important for their future bioapplications. The properties of Au NCs with tunable hydrophobicity were extensively characterized in three different biological situations: (i) interaction with serum in solution, (ii) interaction with synthetic free-standing lipid bilayers integrated in a microfluidic device, and (iii) cell studies with two different cell types (U87MG human primary glioblastoma and A375 melanoma cell lines). Our results indicate a significant impact of the precise tailoring of the hydrophilicity/hydrophobicity balance on the Au NC surfaces, which could prevent the formation of biomolecular absorption while maintaining excellent colloidal stability in solutions with high serum contents. Increasing the surface hydrophobicity of the Au NCs enabled more efficient lipid bilayer membrane insertion and induced faster cellular uptake. We showed the existence of a hydrophobicity threshold, which resulted in colloidal instability, lipid bilayer damage, and acute cytotoxicity. We also demonstrated a significant influence of metal–ligand shell hydrophobicity on the fluorescence signal of the Au NCs, increasing it in the near-infrared region. A twofold signal enhancement was achieved by simple replacement of methyl groups with ethyl groups.

In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to harness and couple a wide range of magneto-optical and magneto-electrical properties, technologically relevant applications require Curie temperatures at or above room temperature and the ability to grow films over large areas. Here we demonstrate the large-area growth of single-crystal ultrathin films of stoichiometric Fe5GeTe2 on an insulating substrate using molecular beam epitaxy. Magnetic measurements show the persistence of soft ferromagnetism up to room temperature in 12 nm-thick films, with a Curie temperature of 293 K, and a weak out-of-plane magnetocrystalline anisotropy. The ferromagnetic order is preserved in bilayer Fe5GeTe2, with Curie temperature decreasing to 229 K. Surface, chemical, and structural characterizations confirm the layer-by-layer growth, 5:1:2 Fe:Ge:Te stoichiometric elementary composition, and single-crystalline character of the films.

International audienceA partial transformation of the (100) surfaces of ceria nanocubes into a set of nanometer-heighted, (111)-ounded, peaks was achieved by an oxidation treatment at 600 degrees C. This particular type of surface nanostructuration allows the preparation of CeO2 nanoparticles in which (111) nanofacets contribute significantly to their surface crystallography. This transformation of the surface structure plays a key influence on the behavior of ceria as a support of gold catalysts. Thus, the appearance of well-developed (111)-nanofacets leads to a much higher efficiency in the usage of this noble metal in the synthesis of catalysts when prepared by the deposition precipitation method. Moreover, gold catalysts supported on the surface-reconstructed oxide present an intrinsic (per gold surface atom) CO oxidation activity much higher than that of catalysts prepared on the nontreated oxide