The evolution of power device technology

Adler, M.S.; Owyang, K.; Baliga, B. Jayant; Kokosa, R.A.

doi:10.1109/t-ed.1984.21754

Cited by 100 publications

(20 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…These system applications can be broadly categorized into two classes: 1) low-voltage ( <200 V ) and high-frequency switching applications, and 2) high-voltage and highpower system applications [3], [4]. The desired characteristics for power switching devices include low on-state conduction losses, high switching speed, high input impedance, good thermal stability, high-temperature operation capability, and good radiation hardness.…”

Section: Introduction Recent Years Significant Advances In Silicomentioning

confidence: 99%

Optimum semiconductors for high-power electronics

Shenai

Scott

Baliga

1989

IEEE Trans. Electron Devices

Self Cite

590

192

View full text Add to dashboard Cite

Elemental and compound semiconductors, including widebandgap semiconductors, are critically examined for high-power electronic applications in terms of on-state resistance, power loss caused by junction leakage, heat conduction, radiation hardness, high-frequency performance, and high-temperature operation. Based on a new analysis applicable to a wide range of semiconducting materials and by using the available measured physical parameters, it is shown that widebandgap semiconductors such as SIC and diamond could offer significant advantages compared to either silicon or group 111-V compound semiconductors for these applications. The new analysis uses peak electric field strength at avalanche breakdown as a critical material parameter for evaluating the quality of a semiconducting material for highpower electronics. Theoretical calculations show improvement by orders of magnitude in the on-resistance, twentyfold improvement in the maximum frequency of operation, and potential for successful operation at temperatures beyond 600°C for diamond high-power devices. New figures of merit for power-handling capability that emphasize electrical and thermal conductivities of the material are derived and are applied to various semiconducting materials. It is shown that improvement in power-handling capabilities of semiconductor devices by three orders of magnitude is feasible by replacing silicon with silicon carbide; improvement in power-handling capability by six orders of magnitude is projected for diamond-based devices.

show abstract

Section: Introduction Recent Years Significant Advances In Silicomentioning

confidence: 99%

Optimum semiconductors for high-power electronics

Shenai

Scott

Baliga

1989

IEEE Trans. Electron Devices

Self Cite

590

192

View full text Add to dashboard Cite

show abstract

“…l), is based upon the addition of a negative pulse to the gate during the time when forward anode voltage V , is being reapplied [ 11- [4]. In specialized types of gate-assisted turn-off thyristors (GATT's) with off-state voltages of VDRM = VRRjW = 1-1.2 kV, the addition of a gate current IGR (Fig.…”

Section: Background and Scopementioning

confidence: 99%

“…[1]- [4]. The main attention in the design of GATT's is usually directed toward the reduction of the injection efficiency of the cathode junction in order to break the regenerative action of the n-p-n transistor at the instant when dVD/dt (Fig.…”

Section: Of 2-4mentioning

confidence: 99%

Importance of the n-base width in the turn-off performance of TIL GATT's

Silard

1986

IEEE Electron Device Lett.

View full text Add to dashboard Cite

The influence of the n-base width on the turn-off performance of two interdigitation level (TIL) gate-assisted turn-off thyristors (GATT's) has been investigated. Devices with n-base width W,, = 250 and 360 pm, respectively, were comparatively tested. The two sets of high-power, 1.7-cm2 area, gold-diffused TIL GATT's processed in identical conditions have low on-state losses, good turn-on sensitivity, and exhibit a high degree of immunity to internal noise signals.The investigations have shown that the TIL GATT's with W,, = 360 pm could possess a better efficiency of the turn-off time t, reduction in comparison with their counterparts having a thinner n base. The main physical mechanisms explaining the lack of incompatibility at the fundamental level between a larger n base and a reduced value oft, in TIL GATT's are described in detail. The results of this work show that the high blocking voltage capability, which is mainly a function of the base thickness W,, and doping, is in no way a hindrance in achieving a substantial reduction of t, in TIL GATT's with an adequate gate-assist signal.

show abstract

“…Ideally, a high power switch should be able to turn-on and turn-off controllably and with minimum switching loss. Numerous semiconductor devices have found application as switches in different ranges of blocking voltage and various advantages and disadvantages have been observed with these devices in these ranges of operation [1]. This paper focuses on power BJT as a switch in medium voltage (up to 1000 V) applications like power supplies and self-oscillating electronic ballasts [2].…”

Section: Introductionmentioning

confidence: 99%

Charge-control modeling of power bipolar junction transistors

Vijayalakshmi

Trivdei²,

Shenai

2000

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

This paper describes an improved lumped circuit model of power bipolar junction transistors (BJTs) that can predict the turn-off fall time to a greater accuracy than currently available models. Though the existing models simulate the storage time and delay time to a good accuracy, the fall time performance is neglected. This is because the existing models do not account for the charge decay due to recombination. The model presented in this paper is based on the charge dynamics of the device. The charge dynamics is explained in detail using simulation results from an advanced two-dimensional (2-D) device and circuit simulator. Based on a physical understanding of the charge dynamics, this model is implemented to incorporate the charge decay due to recombination to account for the current tail during turn-off. The lumped-circuit model is implemented in PSPICE using the existing quasisaturation model along with controlled sources. To validate the model, the device was subjected to hard-as well as soft-switching conditions (zero current switching and zero voltage switching). The modeled results are observed to have a good match with measured results.

show abstract

The evolution of power device technology

Cited by 100 publications

References 50 publications

Optimum semiconductors for high-power electronics

Optimum semiconductors for high-power electronics

Importance of the n-base width in the turn-off performance of TIL GATT's

Charge-control modeling of power bipolar junction transistors

Contact Info

Product

Resources

About