The EU DOTSEVEN Project: Overview and Results

Schröter, M.; Boeck, J.; d’Alessandro, V.; Fregonèse, Sébastien; Heinemann, B.; Jungemann, C.; Liang, Wen-Feng; Kamrani, Hamed; Mukherjee, A.; Pawlak, Andreas; Pfeiffer, Ullrich R.; Rinaldi, N.; Sarmah, Neelanjan; Zimmer, Thomas; Wedel, G.

doi:10.1109/csics.2016.7751070

Cited by 19 publications

(10 citation statements)

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“…Such deficiencies become particularly pronounced for CMOS technologies [17], [18], where fundamentally operated architectures are not readily available, and massive power combining needs to be applied for any reasonable transmitted power levels [19]- [24]. Although SiGe HBT devices potentially promise a relaxed link budget [25]- [27] for transceiver operation near 200 GHz and above, the so far reported SiGe-based wireless experiments have been predominantly performed in a low cm-range distance and/or under waferprobing conditions without packaging [19]- [24], [28]- [31].…”

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confidence: 99%

A QPSK 110-Gb/s Polarization-Diversity MIMO Wireless Link With a 220–255 GHz Tunable LO in a SiGe HBT Technology

Rodríguez-Vázquez

Grzyb

Heinemann

et al. 2020

IEEE Trans. Microwave Theory Techn.

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In this article, a polarization-diversity technique multiple-input multiple-output (MIMO) is demonstrated to double the spectral efficiency of a line-of-sight quadrature phase-shift keying (QPSK) wireless link at 220-255 GHz with a pair of highly integrated single-chip transmitter (TX) and receiver (RX) front-end modules in 0.13-µm SiGe HBT technology ( f T / f max = 350/550 GHz) exploiting only a low-cost wire-bonded chip-on-board packaging solution for high-speed baseband (BB) signals. Both TX and RX chips accommodate two independent fundamentally operated direct-conversion in-phase and quadrature (IQ) paths with separately tunable on-chip multiplier-based (×16) local oscillator (LO) generation paths driven from a single external highly stable 13.75-16-GHz frequency synthesizer. On the RX side, a mixer-first architecture is implemented to improve the symmetry between upper and lower sidebands (USB and LSB) at the cost of an increased noise figure (NF), whereas, on the TX chip, each upconversion mixer is followed by a gain-bandwidth (BW)-limited fourstage power amplifier (PA) to support the link budget at a meter distance. Next, two independent IQ data streams from the upconversion/downconversion paths on each chip are directed to a common lens-coupled broadband on-chip slot antenna system. This way, two orthogonal circular polarizations [left-handed circular polarization (LHCP) and right-handed circular polarization (RHCP)] can be transmitted with sufficient isolation for link operation without the need for a high-speed depolarizer in the BB for any relative orientation between TX and RX modules. The antenna combined with a 9-mm diameter Si-lens provides a directivity of 23.5-27 dBi at 210-270 GHz for each of the modules. This, along with a peak radiated power of 7.5 dBm/ch from the TX module, and the cascaded conversion gain (CG)/single sideband (SSB) NF of 18/18 dB/ch for the RX module followed by a broadband amplifier (PSPL5882) from Tektronix allowed successful transmission of two independent QPSK data streams with an aggregate speed of 110 and 80 Gb/s over 1 and 2 m, respectively, at 230 GHz with a board-level limited channel BB bandwidth (BW) of 13.5 GHz.

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confidence: 99%

A QPSK 110-Gb/s Polarization-Diversity MIMO Wireless Link With a 220–255 GHz Tunable LO in a SiGe HBT Technology

Rodríguez-Vázquez

Grzyb

Heinemann

et al. 2020

IEEE Trans. Microwave Theory Techn.

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“…In the expression of FoM 1 , the oscillator frequency f 0 is compensated; therefore, the excess noise factor F related to the active device and to the topology of the oscillator becomes a first-order parameter, as well as the loaded quality factor Q L of the resonating tank and the output power related to the amplitude of the oscillation V 0 . If the set of FoMs proposed in this article are negative, we can also find in the literature a positive representation of Equation ( 2) and of Equation (5). Here, the lower the FoM, the better the performances in the same logic as for Leeson's expression.…”

Section: Voltage Controlled Oscillatormentioning

confidence: 56%

“…If some articles make use of high-Q active capacitors to compensate the loss of the passives [20], the topology of the tank is closely bound to the noisy active device, and this represents the main optimization axis if the LFN sources are accurately represented and positioned in the transistor electrical model. Lastly, the biasing of the active device can boost the power efficiency as needed in FoMs from Equations (2) to (5). Class-C can improve by 3 dB the phase noise that can be achieved using the Class-B biasing mode.…”

Section: [29]mentioning

confidence: 99%

“…The evolution trend of f t and f max as proposed in the BiCMOS survey in [4], is linked to the shrinking in the dimension of the transistors and to the mastery of their process. Advanced European projects such as DOTSEVEN [5], or the TARANTO project [6], paved the way to the increase in f t and f max (such as the T-Music project under DARPA control [7]). For HBT, the development of double-polysilicon self-aligned (DPSA) process, have considerably improved the operating frequency [8], with f max up to 400 GHz [9].…”

Section: Introductionmentioning

confidence: 99%

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Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

2022

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Silicon technologies for HF applications have been proven for more than two decades, and technologies have greatly evolved. Whether CMOS or BiCMOS technologies, the unique combination of radio frequency, baseband, and digital functions allow a very high level of integration. While it is possible to achieve fully integrated transceivers, the major advantages of these silicon technologies lie mainly in their unparalleled performance in the field of frequency synthesis and frequency conversion. We propose in this paper a review of the major results obtained on these RF components since the beginning of the 2000s, also considering the impact of the technology node. The back-end of line (BEOL) process on which depends the quality of microwave monolithic integrated circuits (MMICs) is briefly presented in the introductory part. If circuit performances are tightly bound to the active devices (i.e., the heterojunction bipolar transistor SiGe HBT or CMOS transistor), passive elements (i.e., quality factor of inductors and varactors, losses of transmission, or interconnection lines) as well as the definition of the substrate also play a major role. The core of the article is oriented toward the noise of synthesized signals and frequency conversion. Frequency synthesis is presented through the analog design of a voltage-controlled oscillator (VCO) or through the direct digital frequency synthesis (DDFS), for which respective figures of merit are presented and discussed in a second section. The spectral purity of the oscillators being decisive in the definition of the throughput of a link is approached through the comparison of different figures of merit (FoM) for a set of circuits achievements over the selected period. If the realization of free oscillators is closely bound to the phase-locked loop (PLL)-type control loop for VCOs, the DDFS solution provides more direct and more flexible alternative at first sight. Therefore, these two solutions are analyzed collectively. Finally, the oscillator integrated in the transmitter or receiver supplies the needed LO (local oscillator) power to the frequency mixer in the frequency conversion module: henceforth, the third part of this study focuses on high-frequency mixer realizations. We thus consider this LO power in some advanced figure of merit mentioned in the second section. The design trade-off of the mixer is presented in an approach combining LO (conversion gain, channel isolation, and phase noise) and RF (HF noise figure and channel isolation) constraints. The final section provides a summary of the results and trends mentioned in the paper.

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“…transistors, etc) to enable electronic circuits to be realized for communications applicationsspecifically, at three frequencies (670 GHz, 850 GHz and 1030 GHz) corresponding to "propagation windows" (where atmospheric attenuation is relatively low) in this part of the electromagnetic spectrum. A related research activity in Europe was the 'dotseven' EU project [3], which developed electronic component capabilities to 700 GHz.…”

Section: Introductionmentioning

confidence: 99%