The erosion groove effects on RF planar magnetron sputtering

Tadjine, R.; Alim, M.M.; Kechouane, M.

doi:10.1016/j.surfcoat.2016.12.009

Cited by 10 publications

(10 citation statements)

References 36 publications

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“…As the pressure decreases to 1 Pa, however, the power law form of I=kV n was satisfied only for the discharge current above 0.5 A, and the exponent n also decreases to 2.75. Usually, the V-I characteristics of target discharge for RF and DC magnetron sputtering all follow a power law of I=kV n , but with different exponent n, which are n=4−10 (DC magnetron sputtering) and 1-3 (RF magnetron sputtering), respectively [30][31][32]. The exponent n indicates the effectiveness of electron confinement.…”

Section: Effect Of Substrate Bias On Sputtering Behavior Of Ag Targetmentioning

confidence: 99%

“…The exponent n indicates the effectiveness of electron confinement. More larger of the exponent n, more well the effectiveness of electron confinement [30][31][32]. For the magnetron sputtering, the effectiveness of electron confinement has largely influence on the production of ions near the target, thus influences the sputtering property.…”

Section: Effect Of Substrate Bias On Sputtering Behavior Of Ag Targetmentioning

confidence: 99%

“…The variation of sheath thickness can be further analyzed by discharge impedance measurement. Usually, the impedance of RF CCP discharge can be characterized through its impedance components Z=R p +jX s [30,31]. The resistance R p relates to the electron heating in the plasma bulk and ion acceleration loss in the sheath, whereas the reactive X s relates to the RF sheath width.…”

Section: Electric Characteristics Of Substrate Bias Dischargementioning

confidence: 99%

“…The resistance R p relates to the electron heating in the plasma bulk and ion acceleration loss in the sheath, whereas the reactive X s relates to the RF sheath width. For the plate electrode, the X s can be written as [31] w e = = --…”

Section: Electric Characteristics Of Substrate Bias Dischargementioning

confidence: 99%

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Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering

Zhu¹,

Ye²,

Wang³

2018

Plasma Sci. Technol.

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The effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron discharge was investigated. The ion velocity distribution function (IVDF), the maximum ion energy and ion flux density were measured at the substrate by a retarding field energy analyzer. The sputtering behavior was investigated by the electric characteristics of target and bias discharges using voltage-current probe technique. It was found that the substrate bias led to the decrease of sputtering power, voltage and current with the amplitude <7.5%. The substrate bias also led to the broadening of IVDFs and the increase of ion flux density, made the energy divergent of ions impacting the substrate. This effect was further enhanced by increasing bias power and reducing discharge pressure.

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Section: Effect Of Substrate Bias On Sputtering Behavior Of Ag Targetmentioning

confidence: 99%

Section: Effect Of Substrate Bias On Sputtering Behavior Of Ag Targetmentioning

confidence: 99%

Section: Electric Characteristics Of Substrate Bias Dischargementioning

confidence: 99%

Section: Electric Characteristics Of Substrate Bias Dischargementioning

confidence: 99%

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Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering

Zhu¹,

Ye²,

Wang³

2018

Plasma Sci. Technol.

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“…Magnetron sputtering [1] is widely used in large-scale fabrication of industrial coatings. In this process, etching of the cathode not only influences the plasma discharge [2] and target morphology of the cathode with different discharge parameters such as the voltage [5], gas pressure [6], magnetic field [7], and ion properties [8], and the Yamamura equation [9] is usually adopted to calculate the ion sputtering yield. However, since trial-and-error experiments are prone to high cost and long validation time/cycles [10], accurate models are needed to predict the cathode etching behavior in magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

High-precision modeling of dynamic etching in high-power magnetron sputtering

Cui¹,

Chen²,

Guo³

et al. 2022

J. Phys. D: Appl. Phys.

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Etching of the cathodes in magnetron sputtering determines the plasma discharge properties and deposition efficiency. In high-power and high-ionization discharges, etching becomes more complicated, resulting in inaccurate results if the conventional models are still used. This work aims at establishing an accurate dynamic model for high-power and high-ionization discharges by combining the cellular automata (CA) method and particle-in-cell/Monte Carlo collision (PIC/MCC) method, in which all the interactions pertaining to the etching morphology, plasma density, electric field, and magnetic field are considered. In high-power discharges such as continuous high-power magnetron sputtering (C-HPMS), strong self-sputtering and intense gas rarefaction stemming from the high temperature in the vicinity of the target influence the etching behavior. Compared to the experimental results, the morphology simulated by the dynamic etching model shows an error of only 0.8% in C-HPMS, which is much less than that obtained by the traditional test-electron Monte Carlo (MC) method (10.1%) and static PIC/MCC method (4.0%). The dynamic etching model provides more accurate results to aid the development and industrial application of high-power magnetron sputtering.

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