2022
DOI: 10.1016/j.tsf.2021.139013
|View full text |Cite
|
Sign up to set email alerts
|

Oxygen flow rate effect on copper oxide thin films deposited by radio frequency magnetron sputtering

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
3
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 18 publications
(3 citation statements)
references
References 35 publications
0
3
0
Order By: Relevance
“…Copper oxide (CuO) is considered a suitable material as the anti-reflection (AR) layer due to its black color. By tuning the morphology of the AR layer or the interface layer, the adhesion of the AR layer to the substrate could be slightly improved. ,,, However, the low resistance of CuO to etching of the chemical solution during planarization is another issue . Nickel (Ni)-contained species exhibit better resistance to chemical corrosion and show improved adhesion to PI that are also considered potential AR materials. …”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Copper oxide (CuO) is considered a suitable material as the anti-reflection (AR) layer due to its black color. By tuning the morphology of the AR layer or the interface layer, the adhesion of the AR layer to the substrate could be slightly improved. ,,, However, the low resistance of CuO to etching of the chemical solution during planarization is another issue . Nickel (Ni)-contained species exhibit better resistance to chemical corrosion and show improved adhesion to PI that are also considered potential AR materials. …”
Section: Introductionmentioning
confidence: 99%
“…Copper oxide (CuO) is considered a suitable material as the anti-reflection (AR) layer due to its black color. 7 9 By tuning the morphology of the AR layer or the interface layer, the adhesion of the AR layer to the substrate could be slightly improved. 4 , 6 , 10 , 11 However, the low resistance of CuO to etching of the chemical solution during planarization is another issue.…”
Section: Introductionmentioning
confidence: 99%
“…Regarding the physical ones, sputtering is one of the most popular physical vapour deposition (PVD) methods used to fabricate films of metals, alloys, oxides, and nitrides [28][29][30][31]. Since the pioneering work of Terada et al (1989) on epitaxial growth of copper nitride [32], reactive RF magnetron sputtering has become the most widely used mode for the fabrication of binary nitride.…”
Section: Introductionmentioning
confidence: 99%