The epitaxy of silicon on quartz

Abstract

Epitaxic films of silicon have been grown chemically on single‐crystal quartz substrates by two different heterogeneous reactions: (a) the hydrogen reduction of trichlorosilane and (b) the pyrolysis of silane. The films have been examined by electron and X‐ray diffraction and electron microscopy, and measurements have been made of room temperature carrier concentration and mobility. Particular attention has been paid to the determination of epitaxic arrangements, and to the mode of formation of multiply oriented films. An effect relating film thickness to orientation has been observed, and reasons for this are discussed. The effect of the chemical reaction on the final silicon orientation is also considered in some detail. Finally, carrier mobility values have been related both to various defect structures observed in the films and to the presence of multiple orientations.

The Nucleation of CVD Silicon on SiO2 and Si3 N 4 Substrates: I . The System at High Temperatures

“…Nucleation experiments with silicon on amorphous, polycrystalline, and monocrystalline substrates have been reported (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15), but attempts to make a more systematic study and quantitative evaluation of the results are relatively scarce. Joyce and Bradley (3) (pyrolysis of silane in vacuum) and Brooker and Unvala (4) (vacuum-evaporation) observed threedimensional nuclei in the deposition of silicon on a monocrystalline silicon substrate.…”

“…Brown etal. (13) have * Electrochemical Society Active Member. reported a similar etching reaction for low silane input concentration on a monocrystalline quartz substrate.…”