2017
DOI: 10.1039/c7ra01330b
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The enhancement of Hall mobility and conductivity of CVD graphene through radical doping and vacuum annealing

Abstract: We report an innovated method for chlorine doping of graphene utilizing an inductively coupled plasma system.

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Cited by 32 publications
(21 citation statements)
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“…The dry doping of graphene by low energy plasmas is an interesting, new, damage-free method [19][20][21][22][23][24]. The method could be applied to other plasma systems such as neutral beams or ion beams.…”
Section: Discussionmentioning
confidence: 99%
“…The dry doping of graphene by low energy plasmas is an interesting, new, damage-free method [19][20][21][22][23][24]. The method could be applied to other plasma systems such as neutral beams or ion beams.…”
Section: Discussionmentioning
confidence: 99%
“…Another method is graphene exfoliation. This type of method will inevitably lead to defects, but compared with CVD, defects result mainly from the oxidation and reduction process [ 61 ]. Various oxidizing agents and temperatures will have an impact on graphene.…”
Section: Preparation Of Graphene and Generation Of Defectsmentioning
confidence: 99%
“…By the mechanical graphite exfoliation utilizing the scotch tape in 2004 [1,2], an ultrathin graphene layer has discovered and emerged as the most promising nano-sized material with the amazing electronic properties [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. Unfortunately, the conductive graphene with gapless characteristics limited its novel physical and chemical properties.…”
Section: Introductionmentioning
confidence: 99%