Plasma-Related Graphene Etching:  a Mini-Review

Pham, Phuong V.

doi:10.18642/jmseat_7100121943

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…Graphene, a honeycomb crystal carbon lattice, has attracted huge research interest during the past few years due to its anomalous properties, including very high carrier mobility, extremely high mechanical strength and optical transparency, electrical conductivity, etc. − As a result, graphene is considered to be an ideal nanomaterial for next-generation semiconductors to replace silicon.…”

Section: Introductionmentioning

confidence: 99%

Hexagon Flower Quantum Dot-like Cu Pattern Formation during Low-Pressure Chemical Vapor Deposited Graphene Growth on a Liquid Cu/W Substrate

Pham

2018

ACS Omega

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The H 2 -induced etching of low-dimensional materials is of significant interest for controlled architecture design of crystalline materials at the micro- and nanoscale. This principle is applied to the thinnest crystalline etchant, graphene. In this study, by using a high H 2 concentration, the etched hexagonal holes of copper quantum dots (Cu QDs) were formed and embedded into the large-scale graphene region by low-pressure chemical vapor deposition on a liquid Cu/W surface. With this procedure, the hexagon flower-etched Cu patterns were formed in a H 2 environment at a higher melting temperature of Cu foil (1090 °C). The etching into the large-scale graphene was confirmed by optical microscopy, atomic force microscopy, scanning electron microscopy, and Raman analysis. This first observation could be an intriguing case for the fundamental study of low-dimensional material etching during chemical vapor deposition growth; moreover, it may supply a simple approach for the controlled etching/growth. In addition, it could be significant in the fabrication of controllable etched structures based on Cu QD patterns for nanoelectronic devices as well as in-plane heterostructures on other low-dimensional materials in the near future.

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Section: Introductionmentioning

confidence: 99%

Hexagon Flower Quantum Dot-like Cu Pattern Formation during Low-Pressure Chemical Vapor Deposited Graphene Growth on a Liquid Cu/W Substrate

Pham

2018

ACS Omega

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“…Through the mechanical graphite exfoliation utilizing the scotch tape in 2004 [1,2], an ultrathin graphene layer has discovered and emerged as the most promising nano-sized material with the amazing electronic properties [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Unfortunately, the conductive graphene with gapless characteristics limited its novel physical and chemical properties.…”

Section: Introductionmentioning

confidence: 99%

Graphene Etching: How Could It Be Etched?

Pham

2018

CGS

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Background: A new nanomaterial species called "graphene" has been of great interest owing to its outstanding mechanical, thermal, chemistry, and physical characteristics. The etching either directly from chemical vapor deposition growth process or plasma technology process has been emerging as attracting research topic in achieving the thinner graphene layer and cleaner surface in order to improve their electronics and optoelectronics. The resided impurities and the high roughness surface are because of the nature of graphenes induced in deteriorating the performance. Removal of the impurities by surface cleaning or plasma-related graphene etching through the layer-by-layer thinning method as a top-down lithography. In particular, new plasma-based graphene etching is freedamage while maintaining its π-binding, which affects its conductivity. Objective: This mini-review will address the latest progress related to graphene etching technology based on emerging strategies. From here, it might be adopted in the etching of other nanomaterials.

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Atmospheric Pressure Chemical Vapor Deposition of Graphene

Pham¹

2019

Chemical Vapor Deposition for Nanotechnology

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Recently, graphene is of highly interest owing to its outstanding conductivity, mechanical strength, thermal stability, etc. Among various graphene synthesis methods, atmosphere pressure chemical vapor deposition (APCVD) is one of the best synthesis one due to very low diffusitivity coefficient and a critical step for graphene-based device fabrication. Hightemperature APCVD processes for thin film productions are being recognized in many diversity technologies such as solid-state electronic devices, in particular, high quality epitaxial semiconductor films for silicon bipolar and metal oxide semiconductor (MOS) transistors. Graphene-based devices exhibit high potential for applications in flexible electronics, optoelectronics, and energy harvesting. In this chapter, recent advances of APCVD-based graphene synthesis and their related applications will be addressed.

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Plasma-Related Graphene Etching: a Mini-Review

Cited by 4 publications

References 21 publications

Hexagon Flower Quantum Dot-like Cu Pattern Formation during Low-Pressure Chemical Vapor Deposited Graphene Growth on a Liquid Cu/W Substrate

Hexagon Flower Quantum Dot-like Cu Pattern Formation during Low-Pressure Chemical Vapor Deposited Graphene Growth on a Liquid Cu/W Substrate

Graphene Etching: How Could It Be Etched?

Atmospheric Pressure Chemical Vapor Deposition of Graphene

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