The energy distribution of the interface state density of Pb/p-Si Schottky contacts exposed to clean room air

Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline Cu2S Based Heterojunctions for Photodetector Application

“…It is clearly obvious that the high value of the obtained series resistance gives evidence for that the R s value should be taken into account the role of R s in determining the interface state density distribution proles of the junction [10]. Similar results have been reported in the literature [11,12]. The experimental values of the barrier height, Φ b and the ideality factor, n for the heterojunction were determined from intercepts and slopes of the forward bias ln(IV ) plot at each temperature.…”

Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I–V characteristics in Co/p-InP contacts

“…The˚a p and the ideality factor n for the device were obtained as 2.01 and 0.80 eV and 1.73 and 0.89 eV at 300 and 400 K, respectively. The high n values at high temperatures indicate the presence of a native oxide layer at the MS interface [4][5][6][7][8][9][10][11][32][33][34][35][36][37]. If semiconductor surfaces are prepared by the usual polishing and chemical etching, the semiconductor surface is inevitably covered with a thin native oxide layer of thickness about 10-20 Å.…”

“…If semiconductor surfaces are prepared by the usual polishing and chemical etching, the semiconductor surface is inevitably covered with a thin native oxide layer of thickness about 10-20 Å. Thus, the MS contacts formed under these conditions are not intimate contact because an interfacial layer of atomic dimensions inevitably separates them [4][5][6][7][8][9][10][11][32][33][34][35][36][37]. An ideality factor value of 2.01 usually leads to the film thicknesses of 15-20 Å [5-10,32-37].…”

“…It is well known that, unless specially fabricated, a SBD possesses a thin interfacial native oxide layer between the metal and the semiconductor. The existence of such an insulating layer converts the devices to metal-insulating-semiconductor (MIS) diode and may have a strong influence on the diode characteristics as well as a change of the interface state charge with bias which will give rise to an additional field in the interfacial layer [4][5][6][7][8][9][10][11][12]. Furthermore, inhomogeneities and/or residual processing-induced contamination in the interfacial region are commonly the reason for deviations from the ideal behavior in the electrical characteristics of Schottky contacts [11][12][13][14][15].…”

Electrical properties and I–V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode

“…However, generally n has a value higher than unity. High values of ideality factor can be ascribed to the existence of local oxide layer on electrodes and non-homogenous barrier [23,33] and [34]. Also, the high values of ideality factor may be attributed to other effects, for example organic layer effect, non-homogeneous thickness of organic film, etc.…”