Electrical properties and I–V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode

Olyaee, Hassan Ghalami Bavil; Foot, P.J.S.; Montgomery, V.

doi:10.1007/s40094-015-0191-7

Cited by 17 publications

(4 citation statements)

References 37 publications

(16 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The device shows a reasonable rectification factor of 3. Although such rectification ratio is lower than that of typical inorganic heterojunction diodes (e.g., SnO 2 /PEDOT:PSS/ PVP and PANI:PEDOT:PSS blends) 16,17 , yet it is still higher than that of organic/inorganic heterojunction diodes (e.g., PEDOT:PSS-PVA/n-Si, and Al/5,14-dihydro-5,7,12,14-tetraazapentacenes (DHTAPs)) 18,19 . For improvement of the rectification ratio, one can consider: (1) improving the diode ideality factor via reducing the nonhomogeneity in the PEDOT:PSS film thickness and the irregularities of the barrier height by optimizing the thin film deposition technique; (2) enhancing the carriers injection efficiency via e.g., diminish the energetic difference…”

mentioning

confidence: 85%

All organic homojunction PEDOT:PSS p–n diode

Aboulhadeed

Ghali

Ayad

2022

Sci Rep

View full text Add to dashboard Cite

It is widely known that poly(3,4-ethylene dioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is only a p-type material, and thus there is a challenge to fabricating all PEDOT:PSS based p–n device. Here, and for the first time, we introduce a new homojunction p–n diode device based solely on PEDOT:PSS thin films. The diode shows a nonlinear I–V behavior with a rectification ratio of 3 and a turn-on voltage ~ 1.4 V.

show abstract

mentioning

confidence: 85%

All organic homojunction PEDOT:PSS p–n diode

Aboulhadeed

Ghali

Ayad

2022

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Its structural and electrochemical properties have already been reported, , and its electronic band structure has been revealed by ultraviolet photoemission spectroscopy . Driven by new efficient synthesis routes, its fundamental properties and its potential for organic devices have been assessed. ,,,− However, extended DHTA n for n > 5 have not been reported so far where the presence of extra phenyl rings should affect the stability of their oxidized and/or reduced forms. Also, a systematic study on the electronic structure of the whole DHTA n family of molecules using a state-of-the-art and predictive ab initio electronic structure method is still lacking.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Combined Experimental and Theoretical Characterization of Dihydro-tetraaza-acenes

et al. 2018

View full text Add to dashboard Cite

We present a combined experimental and theoretical study of electronic and optical properties of dihydro-tetraaza-acenes (DHTAn). Using solvent-free condensation, we are able to synthesize not only DHTA5 but also the longer DHTA6 and DHTA7 molecules. We then investigate their gas-phase electronic structures by means of ab initio density functional calculations employing an optimally tuned range-separated hybrid functional. By comparing with the parent linear oligoacenes (nA) and based on computed ionization potentials and electron affinities, we predict DHTAn molecules to be more stable than acenes of the same length, where we expect DHTAn molecules to be persistent at least up to n = 7 rings. We further exploit the analogy with nA by analyzing the entire intramolecular π-band structure of the DHTAn molecules. This clearly reveals that the additional two electrons donated by the dihydropyrazine group are delocalized over the entire molecule and contribute to its π-electron system. As a consequence, the symmetry of the frontier orbitals of DHTAn differs from that of the parent nA molecule. This also affects the UV–vis absorption spectra which have been measured for DHTA5, 6, and 7 dissolved in dimethyl sulfoxide and analyzed by means of excited state calculations within a time-dependent density functional theory framework.

show abstract

“…From Figure 6, it is possible to infer the ideality factor, the barrier height and the series resistance (Rs) of the investigated devices. For this aim, it is necessary to use the slope and y-intercept of the dV/dln(I) for determining the ideality factor and series resistance values, while considering the y-axis intercept and slope of H(I) plots makes it possible to obtain barrier height and series resistance of the device [51]. From Equation ( 6), the Rs values were calculated as 221 Ω and 188 Ω for dark and illumination conditions.…”

Section: Au/n-si and Au/pinus Brutia/n-si Devices Performacesmentioning

confidence: 99%

“…In addition, from the C-V curves the barrier height value of the Au/Pinus brutia/n-Si device was determined as 0.93 eV, which is considerably higher if compared with the one obtained from I-V measurements. This result can be explained by the non-homogeneous nature of the barrier height formed due to the presence of the interface oxide layer on the n-Si wafer and the non-uniformity of the interface layer [51]. The carrier density of the fabricated device was calculated from the C-V curves.…”

Section: Au/n-si and Au/pinus Brutia/n-si Devices Performacesmentioning

confidence: 99%

Density Functional Theory Calculations of Pinus brutia Derivatives and Its Response to Light in a Au/n-Si Device

et al. 2021

View full text Add to dashboard Cite

In this study, the performance of an organic dye obtained from the bark of the red pine (Pinus brutia) tree growing in Muğla/Turkey as an interface layer in the Au/n-Si Schottky diode (SD) structure was evaluated. For this purpose, at first, the optimized molecular structure, the highest occupied molecular orbital (HOMO), and the lowest unoccupied molecular orbital (LUMO) simulations of the organic dye were calculated by the Gauss program and it was theoretically proven that the dye exhibits semiconducting properties. Then, the electrical and photodiode variables such as ideality factor, effective barrier height, series resistance, interface states density distribution, photosensitivity, and photo responsivity were evaluated employing current-voltage measurements under dark and different illumination densities. Additionally, C-V measurements were used to demonstrate that the fabricated device has capacitive features and this capability varies as a function of the frequency. Under these measurements, the possible conduction mechanism for the organic dye-based Au/n-Si device was investigated and the results showed that Au/Pinus brutia/n-Si may be a good candidate for optoelectronic applications.

show abstract

Electrical properties and I–V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode

Cited by 17 publications

References 37 publications

All organic homojunction PEDOT:PSS p–n diode

All organic homojunction PEDOT:PSS p–n diode

Synthesis and Combined Experimental and Theoretical Characterization of Dihydro-tetraaza-acenes

Density Functional Theory Calculations of Pinus brutia Derivatives and Its Response to Light in a Au/n-Si Device

Contact Info

Product

Resources

About