The electron-phonon interaction at deep Bi
                2
              Te3-semiconductor interfaces from Brillouin light scattering

Wiesner, M.; Trzaskowska, A.; Mróz, B.; Charpentier, Sophie; Wang, S.; Song, Yuxin; Lombardi, Floriana; Lucignano, P.; Benedek, G.; Campi, Davide; Bernasconi, Marco; Guinea, F.; Tagliacozzo, A.

doi:10.1038/s41598-017-16313-5

Cited by 10 publications

(10 citation statements)

References 67 publications

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“…It is interesting to note that this value is similar to the ratio v RW /v SV = 0.83 which would be obtained for the (001) surface of a cubic crystal with the same elastic constant ratios C 12 /C 44 = 0.795 and C 11 /C 44 = 2.24 of Bi 2 Te 3 (see 56 ). Moreover, v RW from the present study is somewhat smaller than that recently measured with Brillouin scattering in Bi 2 Te 3 thin films grown on a stiffer substrate and with the RW penetration depths comparable to the film thickness 61 .…”

Section: Resultscontrasting

confidence: 78%

Nanoscale surface dynamics of Bi₂Te₃(111): observation of a prominent surface acoustic wave and the role of van der Waals interactions

et al. 2018

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We present a combined experimental and theoretical study of the surface vibrational modes of the topological insulator Bi2Te3. Using high-resolution helium-3 spin-echo spectroscopy we are able to resolve the acoustic phonon modes of Bi2Te3(111). The low energy region of the lattice vibrations is mainly dominated by the Rayleigh mode which has been claimed to be absent in previous experimental studies. The appearance of the Rayleigh mode is consistent with previous bulk lattice dynamics studies as well as theoretical predictions of the surface phonon modes. Density functional perturbation theory calculations including van der Waals corrections are in excellent agreement with the experimental data. Comparison of the experimental results with theoretically obtained values for films with a thickness of several layers further demonstrate, that for an accurate theoretical description of three-dimensional topological insulators with their layered structure the inclusion of van der Waals corrections is essential. The presence of a prominent surface acoustic wave and the contribution of van der Waals bonding to the lattice dynamics may hold important implications for the thermoelectric properties of thin-film and nanoscale devices.

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Section: Resultscontrasting

confidence: 78%

Nanoscale surface dynamics of Bi₂Te₃(111): observation of a prominent surface acoustic wave and the role of van der Waals interactions

et al. 2018

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“…Tellurium is a semiconductor with a high thermoelectric gure of merit comparable to GeSi, 1 BiSb 2 or other well-known materials. [3][4][5] The chiral tellurium has been investigated for its anisotropic lattice thermal conductivity and p-type transport properties from anisotropic hole pockets of the Fermi surface. 6,7 In addition, very recently, structures with few-layers of tellurium were studied as two-dimensional topological materials.…”

Section: Introductionmentioning

confidence: 99%

Allotropes of tellurium from first-principles crystal structure prediction calculations under pressure

Liu

Caputo

et al. 2018

RSC Adv.

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We investigated the allotropes of tellurium under hydrostatic pressure based on density functional theory calculations and crystal structure prediction methodology. Our calculated enthalpy-pressure and energy-volume curves unveil the transition sequence from the trigonal semiconducting phase, represented by the space group P3 1 21 in the range of 0-6 GPa, to the body centered cubic structure, space group Im 3m, stable at 28 GPa. In between, the calculations suggest a monoclinic structure,represented by the space group C2/m and stable at 6 GPa, and the b-Po type structure, space group R 3m, stable at 10 GPa. The face-centered structure is found at pressure as high as 200 GPa. As the pressure is increased, the transition from the semiconducting phase to metallic phases is observed.

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“…Finally, for sufficiently thin TI layers (between 3 QL’s and 9 QL’s), topologically protected surface states appear 30 and only surface phonons remain. The electron-surface AP coupling 18 can lead to spin-like oscillations of electrons, which can be exploited in device applications. Here, we demonstrated that not only thickness reduction leads to the symmetry breaking, but also LSP generation and interactions of the TI with different substrates.…”

Section: Discussionmentioning

confidence: 99%

“…The quality of the interface and charge carrier properties can then be studied using light scattering spectroscopy 17 . Similarly, surface acoustic phonons have been recently employed as a “sonar” probe of electron-phonon coupling at the interface of Bi 2 Te 3 and GaAs 18 .…”

Section: Introductionmentioning

confidence: 99%

The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3

Wiesner

Roberts

Lin

et al. 2019

Sci Rep

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A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method to enhance the relative contribution of such states. In thin films with reduced thickness, the confinement results in symmetry-breaking and is critical for the experimental observation of topologically protected surface states. We employ micro-Raman and tip-enhanced Raman spectroscopy to examine three different mechanisms of symmetry breaking in Bi 2 Te 3 TI thin films: surface plasmon generation, charge transfer, and application of a periodic strain potential. These mechanisms are facilitated by semiconducting and insulating substrates that modify the electronic and mechanical conditions at the sample surface and alter the long-range interactions between Bi 2 Te 3 and the substrate. We confirm the symmetry breaking in Bi 2 Te 3 via the emergence of the Raman-forbidden mode. Our results suggest that topological surface states can exist at the Bi 2 Te 3 /substrate interface, which is in a good agreement with previous theoretical results predicting the tunability of the vertical location of helical surface states in TI/substrate heterostructures.

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The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering

Cited by 10 publications

References 67 publications

Nanoscale surface dynamics of Bi₂Te₃(111): observation of a prominent surface acoustic wave and the role of van der Waals interactions

Nanoscale surface dynamics of Bi₂Te₃(111): observation of a prominent surface acoustic wave and the role of van der Waals interactions

Allotropes of tellurium from first-principles crystal structure prediction calculations under pressure

The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3

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The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering

Cited by 10 publications

References 67 publications

Nanoscale surface dynamics of Bi2Te3(111): observation of a prominent surface acoustic wave and the role of van der Waals interactions

Nanoscale surface dynamics of Bi2Te3(111): observation of a prominent surface acoustic wave and the role of van der Waals interactions

Allotropes of tellurium from first-principles crystal structure prediction calculations under pressure

The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3

Contact Info

Product

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Nanoscale surface dynamics of Bi₂Te₃(111): observation of a prominent surface acoustic wave and the role of van der Waals interactions

Nanoscale surface dynamics of Bi₂Te₃(111): observation of a prominent surface acoustic wave and the role of van der Waals interactions