The Electron Mobility and Thermoelectric Power in InSb at Atmospheric and Hydrostatic Pressures

Abstract

First, theoretical calculations of electron mobility and thermoelectric power in n-type InSb are reported a t liquid nitrogen and room temperatures. All the scattering mechanisms of importance in InSb are taken into account. The calculations based upon it variational solution of the Boltzmann equation are compared with experimental results over the whole available range of electron concentrations. Good agreement between theoretical and experimental results is obtained using the value of deformation potential constant C = 14.6 eV. Secondly, both, experimental and theoretical investigations are made of mobility in InSb under hydrostatic pressure at 77 K within a wide range of electron concentrations. The smallest electron Concentrations obtained by freezing the conduction electrons on the metastable states are of order of 1 x 1012 cm-3. Also for those smallest concentration it is possible t o describe theoretically the dependence of mobility on the hydrostatic pressure using the same set of parameters as previously, and assuming some compensation of donors by acceptors. B IIepBOfi saCTI4 pa60TbI IIpllBOAHTCFI pe3yJIbTaTbI TeOpeTI49eCKHX pau&TOB 3JIeKTPOHHOfi IIOHBLlWiHOCTM YI TepMO-3AC B aHTI4MOHHAe HlIHH;1 n-TI4IIa IlpH a3OTHOfi I4 ICOMHaTHOH TeM-IIepaType. BhlWTCJleHI4R BeJIHCb MeTOAOM BapHauIIoHHOrO PeIIleHHR YpaBHeHHH EOJIblI-MaHa C Y9&TOM BCeX, HrpaIOuHX CJ'4eCTBeIIHyIo pOJIb B InSb, MeXaHI43MOB paCCeHHMR HOCHTeJlefi, nOJIyqeH0 XOpOluee COrJlaCkIe C 3KCnepHMeHTaJIbHbIMM HaHHbIMM npll 3Ha-4eHI4H KOHCTaHTbI ~e#OpMaUYIOHHOrO IIOTeHUHaJIa c = 14,6 eV. BTopaFi YaCTb IIOCBR-UeHa 3KCIIepI4MeHTaJIbHOMy I4 TeOpeTMqeCKOMy I4CCJIe~OBaHHIo 3aBMCHMOCTM IIOABHW-HOCTM 3JleKTpOHOB B InSb OT rM~pocTaT~seCKor0 AaBJIeHHH IIpM T = 77 K B IUHPOHOM WaIIa3OHe ROHUeHTpaUHH CBO6OHHbIX 3JleKTpOHOB. M3MeHRR 3TY I<OHUeHTpaUHIo IIyT&M 3aMOPOWiMBaHMfl 3JIeHTPOHOB Ha MeTaCTa6MJlbHbIX COCTOIIHMHX AOHOPOB IIOJIyqeHO HOH-UeHTpaUMEl IIOpHAHa Cm-3. PaCCqYITaHHbIe IIpH TeX W e KBK B IIepBOn ~aCTM3Ha9eHMHX IIapaMeTpOB 3aBYICHMOCTH IIOABHWiHOCTI4 OT jIaBJIeHHR XOpOrUO OTO6paHEaIoT eHCIIepYI-MeHTaJIbIible HZiHHbIe BO BC&M AHalla3OHe HOHI[eHTpaUMM, eCJIH YseCTb BJIHHHMe KOMIIeH-cI4pyK)LUI.Ix aKUenTopoB.

Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

“…Electrons thus accumulate at high densities until they recombine with injected holes via band-to-band tunneling, Shockley-Read-Hall, [ 48 ] or Auger [ 50,51 ] processes. In the i-InSb layer, we assume an electron mobility [ 52 ] of 7000 cm 2 V −1 s −1 (400 cm 2 V −1 s −1 for holes). At all voltages, we assume an Auger-limited lifetime of 135 ps, a value consistent with studies of optically pumped InSb.…”

“…At all voltages, we assume an Auger-limited lifetime of 135 ps, a value consistent with studies of optically pumped InSb. [ 51,53 ] We use worst-case values of reported carrier lifetimes [53][54][55][56] and mobilities [ 52,57,58 ] at high carrier concentrations to identify phenomena that do not rely on optimistic input parameters. These recombination processes enable high-speed GHz operation (subject to suitable RC time constants) in the high injection forward bias scheme.…”

High-quality InSb growth by metalorganic vapor phase epitaxy

“…InSb is a candidate material for magnetic and mid-infrared sensors because of its high electron mobility (78,000 cm 2 V À 1 s À 1 ) and because its small direct band gap (0.18 eV) corresponds to the absorption of wavelengths in the range from 3 to 8 μm [1,2]. Highquality InSb films are very important in these sensors, and InSbbased devices are mainly being developed by using molecular beam epitaxy (MBE) [3][4][5].…”

Optically and thermally controlled terahertz metamaterial via transition between direct and indirect electromagnetically induced transparency

“…22,23 For metal gold, its optical properties show consistency with the Drude model at the THz frequencies:…”