1975
DOI: 10.1002/pssa.2210310104
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The electromigration of gold in glassy As2Se3

Abstract: The migration of gold in amorphous arsenic selenide, influenced by an electric field, is investigated in the range 130 to 180°C by means of radioactive tracers. In order to evaluate the electromigration profiles, the exact solution of the Fick equation with drift term under the initial condition of a thin layer on a semi‐infinite is derived and applied. The displacement of the concentration peak yields the mobility and the charge of the migrating gold atoms: at 180°C 2.9 × 10−11 cm2/Vs and 1e, respectively. Th… Show more

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Cited by 10 publications
(3 citation statements)
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“…At the end we note that the charge of gold impurity atoms in vitreous As,Se, has been defined by the authors of [7, 81 using the electrotransport method. Our data are in agreement with the ones obtained in [7], where this charge a t 120 "C was found to be (1.40 f 0.20) e, but are in poor accordance with the data of [S], where 2 = 0.2e was found. It is hardly possible to account for the discrepancy between our data and those of [S] as well as between the data of [7] and [S].…”
Section: Gom Impurity Atomssupporting
confidence: 91%
“…At the end we note that the charge of gold impurity atoms in vitreous As,Se, has been defined by the authors of [7, 81 using the electrotransport method. Our data are in agreement with the ones obtained in [7], where this charge a t 120 "C was found to be (1.40 f 0.20) e, but are in poor accordance with the data of [S], where 2 = 0.2e was found. It is hardly possible to account for the discrepancy between our data and those of [S] as well as between the data of [7] and [S].…”
Section: Gom Impurity Atomssupporting
confidence: 91%
“…The higher left-hand D's cannot be caused by the influence of the semi-infinite geometry. The exact solution presented in [13], being slightly asymmetric, cannot explain the measured profiles, as is demonstrated in Fig. 3c; -the simultaneous migration of different species.…”
Section: Discussionmentioning
confidence: 86%
“…3.2 L'ÉLECTROMIGRATION. -L'application d'un champ électrique sur un dispositif est une contrainte favorisant l'électromigration [16].…”
Section: Fig 4 -Durée De Vie En Fonction De La Température Pour Uneunclassified